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    HFS630

    Abstract: No abstract text available
    Text: BVDSS = 200 V RDS on typ = 0.34 Ω HFS630 ID = 9 A 200V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		HFS630 O-220F 47max 54typ HFS630 PDF