H7N0607DS Search Results

H7N0607DS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H7N0607DSTL-E		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 20A 34Mohm DPAK(S)/To-252

H7N0607DS Price and Stock

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Renesas Electronics Corporation H7N0607DSTL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	H7N0607DSTL-E		1,208			1 $0.95 10 $0.95 100 $0.95 1000 $0.38 10000 $0.38	Buy Now
Renesas Electronics Corporation H7N0607DS91TL
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NexGen Digital	H7N0607DS91TL		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

H7N0607DS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H7N0607DS		Renesas Technology	Silicon N Channel MOS FET		Original	PDF

H7N0607DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
H7N0607DL Abstract: H7N0607DS PRSS0004ZD-B PRSS0004ZD-C H7N0607DSTL A605A Text: H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS on = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)	Original	H7N0607DL, H7N0607DS REJ03G0124-0300 PRSS0004ZD-B PRSS0004ZD-C H7N0607DL Unit2607 H7N0607DL H7N0607DS PRSS0004ZD-B PRSS0004ZD-C H7N0607DSTL A605A	PDF
H7N0607DL Abstract: H7N0607DS Text: H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0200Z Rev.2.00 Jul.21.2004 Features • Low on-resistance RDS on = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline DPAK(L)-2 D DPAK-(S) 4 4 1. Gate	Original	H7N0607DL, H7N0607DS REJ03G0124-0200Z H7N0607DL H7N0607DL H7N0607DS	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	do-900 Unit2607	PDF
H7N0607DL Abstract: H7N0607DS PRSS0004ZD-B PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 H7N0607DL H7N0607DS PRSS0004ZD-B PRSS0004ZD-C	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
H7N1004DS Abstract: H7N0607DL H7N0607DS H7N1004DL H7N1004DSTL PRSS0004ZD-B PRSS0004ZD-C Text: H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS on = 25 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B	Original	H7N1004DL, H7N1004DS REJ03G1482-0100 PRSS0004ZD-B PRSS0004ZD-C H7N0607DS H7N0607DL H7N1004DS H7N0607DL H7N0607DS H7N1004DL H7N1004DSTL PRSS0004ZD-B PRSS0004ZD-C	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H7N1009MD Abstract: fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC Text: April 2010 Renesas Electronics Power Devices for Automotives Features Surface mounting and multi-tip built-in package Merits High efficiency and low loss, Best support for high-power control Miniaturization, Integration High avalanche destruction tolerance,	Original	injectio009MD H7N1006MD H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS O220FM HSOP20 H7N1009MD fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC	PDF
H7N0607DL Abstract: H7N0607DS H7N1004DL H7N1004DS H7N1004DSTL PRSS0004ZD-B PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF