GT10Q101
Abstract: GT10Q301 rg3100
Text: GT10Q101 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT10Q101 ○ 大電力スイッチング用 単位: mm • 第 3 世代品です。 • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。 : tf = 0.32 s 最大
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GT10Q101
2-16C1C
20070701-JA
GT10Q101
GT10Q301
rg3100
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GT10Q101
Abstract: GT10Q301
Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
2-16C1C
GT10Q101
GT10Q301
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GT10Q101
Abstract: GT10Q301
Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
2-16C1C
GT10Q101
GT10Q301
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GT10Q101
Abstract: GT10Q301
Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
2-16C1C
GT10Q101
GT10Q301
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Untitled
Abstract: No abstract text available
Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
2-16C1C
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GT10Q101
Abstract: GT10Q301
Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
2-16C1C
GT10Q101
GT10Q301
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Untitled
Abstract: No abstract text available
Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Unit: mm Maximum Ratings (Ta = 25°C)
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GT10Q101
2-16C1C
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GT10Q101
Abstract: GT10Q301
Text: GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)
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GT10Q101
000707EAA1
GT10Q101
GT10Q301
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Untitled
Abstract: No abstract text available
Text: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Unit: mm Maximum Ratings (Ta = 25°C)
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GT10Q101
2-16C1C
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
GT45F122
TK13A60U
GT30F123
2SK4207
GT30J124
IGBT GT30F123
gt30f122
GT30G122
2SC5471
IGBT GT30J124
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
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BCJ0010G
BCJ0010F
GT30J124
GT45F122
GT30F123
GT30F124
gt30f122
IGBT GT30F124
gt30g122
gt30g124
GT45G122
GT30F125
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