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    GRM32RR71H105KA01B Search Results

    GRM32RR71H105KA01B Datasheets (1)

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    GRM32RR71H105KA01B muRata Monolithic Ceramic Capacitors Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GRM32RR71H105KA01# # indicates a package specification code. < List of part numbers with package codes > GRM32RR71H105KA01L , GRM32RR71H105KA01K , GRM32RR71H105KA01B Shape References Packaging L size 3.2 ±0.3mm W size 2.5 ±0.2mm T size 1.8 ±0.2mm External terminals width e


    Original     		PDF GRM32RR71H105KA01# GRM32RR71H105KA01L GRM32RR71H105KA01K GRM32RR71H105KA01B 330mm) 180mm) 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3

    R04350B

    Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 R04350B wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725NBR1

    MW7IC2725GNR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    j6808

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors

    250GX-0300-55-22

    Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 250GX-0300-55-22 j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101

    grm43-2x7r225

    Abstract: GRM42-2X7R104K100 GHM1545X7R105K250 GRM43-2C Ceramic Capacitors 104 GRM44 GRM43DR73A103KW01L GRM42-2B105K50 GRM43RR72A154KA01L GRM42-2X7R225K25
    Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 102 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1545X7R104K1K GRM55DR73A104KW01L Capacitors Monolithic Ceramic Medium-voltage


    Original     		PDF GHM1545X7R104K1K GRM55DR73A104KW01L GHM1545X7R105K250 GRM55DR72E105KW01L GHM1545X7R154K630 GRM55DR72J154KW01L GHM1545X7R224K630 GRM55DR72J224KW01L GHM1545X7R334K250 GRM55DR72E334KW01L grm43-2x7r225 GRM42-2X7R104K100 GRM43-2C Ceramic Capacitors 104 GRM44 GRM43DR73A103KW01L GRM42-2B105K50 GRM43RR72A154KA01L GRM42-2X7R225K25

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

    MW7IC2725N

    Abstract: MW7IC2725GNR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 MW7IC2725NR1 ATC600S6R8CT250XT
    Text: Document Number: MW7IC2725N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 ATC600S6R8CT250XT

    ATC600S6R8CT250XT

    Abstract: ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22 MW7IC2425GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2425N Rev. 0, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 ATC600S6R8CT250XT ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF2004NB Rev. 0, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MMRF2004NBR1 The MMRF2004NB wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage


    Original     		PDF MMRF2004NB MMRF2004NBR1 MMRF2004NB