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    u212

    Abstract: IRFR122 u210 irfr210 U2-12
    Text: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF 7Tb4142 DD1233S IHFR210/212 IRFU210/212 IRFR210/U210 IRFR122/U212 IRFR210/21 IRFU210/212 IRFR212/U212 u212 IRFR122 u210 irfr210 U2-12