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    GN6030C

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS SIE D GD11D30 WÊ «HIT4 ' T ^ 3 c ì - 1Z b GN6030C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO—3P High speed power switching Features • High speed switching tf —200 ns typ, 400 ns max • Low on saturation voltage


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    1b205 GN6030C 001103b PDF