G8370-10
Abstract: KIRD1058E01 SE-171
Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.
|
Original
|
G8370-10
SE-171
KIRD1058E01
G8370-10
KIRD1058E01
|
PDF
|
G8370-03
Abstract: G8370 G8370-01 G8370-02 G8370-05 210pA
Text: PHOTODIODE • 仕様／絶対最大定格 型名 G8370-01 G8370-02 G8370-03 G8370-05 外形寸法図/ 窓材 *1 パッケージ ➀/K TO-18 ➁/K TO-5 ➂/K TO-8 受光面サイズ mm φ1 φ2 φ3 φ5 逆電圧 VR Max. (V) 10 5 絶対最大定格 動作温度
|
Original
|
G8370-01
G8370-02
G8370-03
G8370-05
101RDA0154JC
KIRDA0155JB
G8370-03
G8370
G8370-01
G8370-02
G8370-05
210pA
|
PDF
|
G8370-81
Abstract: G8370-82 G8370-83 G8370-85
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E04
G8370-81
G8370-82
G8370-83
G8370-85
|
PDF
|
G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E03
G8370-01
G8370-02
G8370-03
G8370-05
|
PDF
|
G8370-81
Abstract: G8370-82 G8370-83 G8370-85
Text: PHOTODIODE InGaAs PINフォトダイオード G8370-81/-82/-83/-85 低PDL Polarization Dependence Loss 本製品は 1.5 µm帯で低PDL (Polarization Dependence Loss)を実現したInGaAs PINフォトダイオードです。低雑音、 大並列抵抗という特
|
Original
|
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
VIRDA0155JB
G8370-81
G8370-82
G8370-83
G8370-85
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E01
|
PDF
|
2010DN
Abstract: y 2010DN 0441 G8370-10 *2010dn KPSD1022J01 DSASW005178
Text: PHOTODIODE InGaAs PINフォトダイオード G8370-10 大受光面 φ10 mm のセラミックタイプ 特長 用途 l 受光面サイズ: φ10 mm l 高感度: 0.95 A/W Typ. (λ=1.55 µm) l 低暗電流 l 低PDL: 5 mdB Typ., 10 mdB Max. l 感度不均一性: ±2 % Typ.
|
Original
|
G8370-10
KIRDA0167JA
KIRDB0285JA
KIRDB0284JA
435-85581126-1TEL
434-3311FAX
KPSD1022J01
2010DN
2010DN
y 2010DN
0441
G8370-10
*2010dn
KPSD1022J01
DSASW005178
|
PDF
|
G8370-10
Abstract: KIRD1058E01 SE-171 photodiode InGaAs
Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.
|
Original
|
G8370-10
SE-171
KIRD1058E01
G8370-10
KIRD1058E01
photodiode InGaAs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.
|
Original
|
G8370-10
SE-171
KIRD1058E01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
SE-171
KIRD1064E04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
SE-171
KIRD1064E03
|
PDF
|
photodiode InGaAs NEP
Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E03
photodiode InGaAs NEP
G8370-01
G8370-02
G8370-03
G8370-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E02
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E03
|
PDF
|
G8370-01
Abstract: G8370 G8370-02 G8370-03 G8370-05
Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
|
Original
|
G8370
G8370-01
G8370-02
G8370-03
G8370-05
SE-171
KIRD1050E01
G8370-01
G8370-02
G8370-03
G8370-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Infrared detector modules with preamps Non-cooled Type Easy-to-use detector modules with built-in preamps These infrared detector modules contain a preamp and operate by just connecting to a DC power supply. The detector element is selectable from among InGaAs and PbSe detectors. Thermoelectrically cooled types are also available. Besides these detectors, we
|
Original
|
B1201,
KIRD1035E10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMB1N-1550 v 1.0 1.07.2014 Description SMB1N-1550 is a surface mount InGaAsP High Power LED with a typical peak wavelength of 1550 nm and radiation of 16 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.
|
Original
|
SMB1N-1550
SMB1N-1550
|
PDF
|
L1050G-03
Abstract: 1050nm
Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-03 Lead Pb Free Product – RoHS Compliant L1050G-03 Infrared LED Lamp L1050G-03 is a GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1050nm.
|
Original
|
L1050G-03
L1050G-03
1050nm.
1050nm
|
PDF
|
L1050G-04
Abstract: 1050nm
Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-04 Lead Pb Free Product – RoHS Compliant L1050G-04 Infrared LED Lamp L1050G-04 is a GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1050nm.
|
Original
|
L1050G-04
L1050G-04
1050nm.
1050nm
|
PDF
|
SMT1550
Abstract: 1550nm
Text: epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1550 Lead Pb Free Product – RoHS Compliant SMT1550 High Performance NIR TOP IR LED SMT1550 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin or silicone resin.
|
Original
|
SMT1550
SMT1550
1550nm.
1550nm
72-hour-
|
PDF
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1550 Lead Pb Free Product – RoHS Compliant SMT1550 High Performance NIR TOP IR LED SMT1550 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin or silicone resin.
|
Original
|
SMT1550
SMT1550
1550nm.
1550nm
72-hour-
|
PDF
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-03 Lead Pb Free Product – RoHS Compliant L1200-03 Infrared LED Lamp L1200-03 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
|
Original
|
L1200-03
L1200-03
1200nm.
1200nm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Power Infrared LED 1550 nm Lead(Pb)Free Product-RoHS Compliant L1550-06 Infrared LED Lamp L1550-06 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1550nm. Features
|
Original
|
L1550-06
L1550-06
1550nm.
G8370-85.
J-6512.
|
PDF
|