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Microchip Technology Inc SG1626T IC GATE DRVR HALF-BRIDGE TO99
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DigiKey	SG1626T	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc	SG1626T			14 Weeks		1 $378.2 10 $378.2 100 $378.2 1000 $378.2 10000 $378.2	Buy Now
OMRON Industrial Automation F39-MLG1626 REFLECTIVE MIRROR FOR F2SJ
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DigiKey	F39-MLG1626	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc SG1626T-DESC IC GATE DRVR HALF-BRIDGE TO99
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SG1626T-DESC	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc	SG1626T-DESC		279	16 Weeks		1 $541.91 10 $541.91 100 $541.91 1000 $541.91 10000 $541.91	Buy Now
Microchip Technology Inc LXMG1626-05-65 DUAL 5W OUTPUT CCFL INVERTER
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DigiKey	LXMG1626-05-65	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc LXMG1626-12-67 MOD INVERTER CCFL DUAL 10W 12V
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DigiKey	LXMG1626-12-67	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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G1626 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G1626 Abstract: No abstract text available Text: G1626 Global Mixed-mode Technology 7-bit Programmable VCOM Calibrator with Write Protected Integrated Nonvolatile Memory Features General Description Integrated Nonvolatile Memory to Store The G1626 provides a programmable sink-current output that attaches to an external voltage divider. The	Original	G1626 G1626 G1626RD1U DS962	PDF
PA1819 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and	Original	PA1819 PA1819	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
PA18-3 Abstract: No abstract text available Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1830 P チャネル MOS FET スイッチング用 µ PA1830 は，4.0 V 電源系による直接駆動が可能なス外形図（単位：mm）イッチング素子です。	Original	PA1830 PA1830 PA1830GR-9JG 6268JJ1V0DS G16268JJ1V0DS PA18-3	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1830 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1830 is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PA1830 PA1830 PA1830GR-9JG	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
G-1626 Abstract: PA1819 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PA1819 PA1819 G16267JJ1V0DS G-1626	PDF
Untitled Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PA1830 PA1830 o6268JJ1V0DS G16268JJ1V0DS	PDF
Untitled Abstract: No abstract text available Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1819 P チャネル MOS FET スイッチング用外形図（単位: mm） µ PA1819 は，4.0 V 電源系による直接駆動が可能なスイッチング素子です。	Original	PA1819 PA1819 PA1819GR-9JG G16267JJ1V0DS	PDF