RIC0639
Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G
Text: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256B
256Kb
FM25256B
256-kilobit
FM25256B,
FM25256B-G
B70003G
RIC0639
FM25V02
RIC0639
FM25256B-G
FM25W256
FM25V02 -G
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FM25256
Abstract: FM25256B AN-305
Text: AN-305 Differences in FM25256 and FM25256B 256Kb 5V SPI FRAM Devices DESCRIPTION There are differences between the FM25256 and FM25256B 5V SPI 256Kb FRAM devices. As of March 2007, the FM25256 was declared “not recommended for new designs”, and the alternative device is the
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AN-305
FM25256
FM25256B
256Kb
FM25256B
15MHz
AN-305
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FM25256B-G
Abstract: FM25256B
Text: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256B
256Kb
FM25256B
256-kilobit
MS-012
FM25256B,
FM25256B-G
B70003G
RIC0639
FM25256B-G
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256B
256Kb
FM25256B
256-kilobit
complexit90
MS-012
FM25256B,
FM25256B-G
A60003G
RIC0639
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FM25256-G
Abstract: sck-15 FM25256 FM25256-S NAT 3 transistor FM25W256
Text: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256
256Kb
FM25256
FM25W256
FM25256B
FM25256-G
sck-15
FM25256-S
NAT 3 transistor
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fm23mld16
Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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300-million
fm23mld16
FM3316
7313 28 pin
FM25L04
soic8 footprint
interface 8KB ROM and 16KB RAM to 8051
FM22L16
FM6124
footprint soic28
RAMTRON
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FM25V10 I2C programming example
Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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AN-304
FM25xxx.
FM24xxx
AN304
FM25L256
FM25L256B)
FM25H20
FM25V10/V05/V02
FM25V10 I2C programming example
FM25L04
FM25xxx
FM25V02
FM25V02 -G
DFN8
FM25V05
FM25C160
FM25CL64
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FM25L04
Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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AN-304
FM25xxx.
FM24xxx
AN304
FM25L256
FM25L256B)
FM25H20
FM25L04
AN-304
FM25040A
FM25256B
FM25C160
FM25CL64
FM25L16
FM25L256B
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FM25L256
Abstract: FM25256 FM25256B FM25L256B
Text: Errata for FM25256 & FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 003 all Date Codes Date May 3, 2005 (Updated: Dec. 2007) Product Marking FM25256 and FM25L256 (all package types) Testing has identified a problem with FM25256 and FM25L256 devices that relates to slow write cycles. Write errors (typically
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FM25256
FM25L256
FM25256
FM25L256
200KHz
200KHz,
FM25256B
FM25L256B)
FM25L256B
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FM25L256
Abstract: FM25256 FM25256B FM25L256B
Text: Errata for FM25256 & FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 004 all Date Codes Date Feb. 14, 2006 Product Marking FM25256 and FM25L256 (all package types) Recent testing has identified a problem with FM25256 and FM25L256 devices that relates to the WEL bit in the status register.
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FM25256
FM25L256
FM25256
FM25L256
FM25256B
FM25L256B)
FM25L256B
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FM25256
Abstract: FM25256-G FM25256-S
Text: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256
256Kb
FM25256
FM25W256
FM25256B
FM25256-G
FM25256-S
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chn 734
Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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300-million
chn 734
FM3316
CHN 545
interface 8KB ROM and 16KB RAM to 8051
fm23mld16
FM25L04
MLF68
FM24C16A
FM22L16
FM28V020 MATERIALS
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25256
256Kb
FM25256
FM25W256
FM25256B
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