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    SUMITOMO ELECTRIC Device Innovations Inc FLM1011-6F

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    FLM101 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLM1011-12F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM1011-12F Fujitsu FET, P Channel, ID 9 A Original PDF
    FLM1011-15F Eudyna Devices X,Ku-Band Internally Matched FET Original PDF
    FLM1011-2 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM1011-2 Unknown FET Data Book Scan PDF
    FLM1011-20F Eudyna Devices X,Ku-Band Internally Matched FET Original PDF
    FLM1011-3F Eudyna Devices FET Misc, X, Ku-Band Internally Matched FET Original PDF
    FLM1011-3F Fujitsu FET, P Channel, ID 2.1 A Original PDF
    FLM1011-4C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM1011-4C Unknown FET Data Book Scan PDF
    FLM1011-4D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM1011-4D Unknown FET Data Book Scan PDF
    FLM1011-4F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM1011-4F Fujitsu FET, P Channel, ID 2.6 A Original PDF
    FLM1011-6F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM1011-6F Fujitsu FET, P Channel, ID 4.2 A Original PDF
    FLM1011-8C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM1011-8C Unknown FET Data Book Scan PDF
    FLM1011-8D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM1011-8D Unknown FET Data Book Scan PDF

    FLM101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F

    FLM1011-6F

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F V4888

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm Typ. • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 29% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 10.7 to 11.7GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		PDF FLM1011-4F -46dBc 50ohm FLM1011-4F 25deg

    FLM-10

    Abstract: 223-28 FLM1011-12F
    Text: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 FLM-10 223-28

    FLM1011-6F

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200

    fujitsu gaas fet

    Abstract: FLM1011-3F
    Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-3F -46dBc FLM1011-3F fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: hadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1011-12F -45dBc FLM1011-12F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-12F -45dBc FLM1011-12F

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1011-15F FLM1011-15F

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F Vol88

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)15 V(BR)GSS (V)-5 I(D) Max. (A)1.5 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.0Â I(DSS) Max. (A)1.5 @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.600uÂ


    Original     		PDF FLM1011-2

    FLM1011-8F

    Abstract: FLM1011
    Text: FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-8F -46dBc FLM1011-8F FLM1011

    F2117

    Abstract: ED-4701 FLM1011-15F FLM101115
    Text: FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM1011-15F FLM1011-15F F2117 ED-4701 FLM101115

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1011-4F -46dBc FLM1011-4F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1011-8F -46dBc FLM1011-8F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-12F -45dBc FLM1011-12F Gate-Source88

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200

    FLM1011-4F

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-4F -46dBc FLM1011-4F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-8C Internally Matched Power CiaAs I l l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w TotalPower Dissipation Tc = 25°C Pt Storage Temperature


    OCR Scan     		PDF FLM1011-8C 2200mA 28dBm

    37MT3

    Abstract: No abstract text available
    Text: FLM1011-6F Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F 37MT3

    FLM1011-4C

    Abstract: No abstract text available
    Text: FLM1011-4C RI lîrrQi I Internally Matched Power GaAs FETs r UJ11jU FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1011-4C UJ11jU FLM1011-4C

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4D RI lîrrQi I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1011-4D UJ11jU -45dBc 25dBm FLM1011-4D

    FLM1011-12F

    Abstract: 3600mA
    Text: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: r!add = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 3600mA

    FLM1011-4C

    Abstract: No abstract text available
    Text: FLM1011-4C Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 25 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature


    OCR Scan     		PDF FLM1011-4C FLM1011-4C