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    FDP054N10 Price and Stock

    onsemi FDP054N10

    MOSFET N-CH 100V 120A TO220-3
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    Richardson RFPD FDP054N10 1,000
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    Fairchild Semiconductor Corporation FDP054N10

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    Bristol Electronics FDP054N10 392
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    Quest Components FDP054N10 313
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    FDP054N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP054N10 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3 Original PDF

    FDP054N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    FDP054N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original
    FDP054N10 O-220 PDF

    FDP054N10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while


    Original
    FDP054N10 FDP054N10 PDF

    FDP054N10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP054N10 O-220 FDP054N10 PDF

    FDP054N10

    Abstract: MOSFET 100V
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP054N10 O-220 FDP054N10 MOSFET 100V PDF

    fdp054n10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP054N10 FDP054N10 O-220 PDF

    MOSFET 100V

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP054N10 FDP054N10 O-220 MOSFET 100V PDF