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    FDMD82100 Price and Stock

    onsemi FDMD82100

    MOSFET 2N-CH 100V 7A 12POWER
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    FDMD82100 Digi-Reel 1
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    Newark FDMD82100 Reel 3,000
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    TME FDMD82100 1
    • 1 $3.45
    • 10 $3.1
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    onsemi FDMD82100L

    MOSFET 2N-CH 100V 7A 12POWER
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    Quest Components FDMD82100L 79
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    TME FDMD82100L 1
    • 1 $2.01
    • 10 $1.81
    • 100 $1.44
    • 1000 $1.33
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    FDMD82100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMD82100 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, FET N-CH 100V 7A 12POWER Original PDF
    FDMD82100L ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 100V 7A 6-MLP Original PDF

    FDMD82100 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 7 A, 19 mΩ Features General Description „ Max rDS on = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance


    Original
    PDF FDMD82100

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original
    PDF FDMD82100L

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original
    PDF FDMD82100L