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    FDG6308P Price and Stock

    onsemi FDG6308P

    MOSFET 2P-CH 20V 0.6A SC88
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    FDG6308P Digi-Reel 1
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    Newark FDG6308P Reel 3,000
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    TME FDG6308P 3
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    Chip-Germany GmbH FDG6308P 1,347
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    Fairchild Semiconductor Corporation FDG6308P

    Trans MOSFET P-CH 20V 0.6A 6-Pin SC-88 T/R / MOSFET 2P-CH 20V 0.6A SC70-6
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    Win Source Electronics FDG6308P 64,590
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    FDG6308P Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDG6308P Fairchild Semiconductor P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    FDG6308P Fairchild Semiconductor P-Channel 1.8 V Specified PowerTrench MOSFET Original PDF
    FDG6308P Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET P-CH DUAL 20V SC70-6 Original PDF
    FDG6308P_NL Fairchild Semiconductor Dual P-Channel 1.8V Specified PowerTrench MOSFET Original PDF

    FDG6308P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		PDF FDG6308P SC70-6 SC70-6 CBVK741B019 F63TNR FDG6302P FDG6308P marking code 04 sc70-6

    FDG6308P

    Abstract: SC70-6
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		PDF FDG6308P SC70-6 SC70-6 FDG6308P

    marking 08

    Abstract: No abstract text available
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		PDF FDG6308P SC70-6 SC70-6 FDG6308P marking 08

    Untitled

    Abstract: No abstract text available
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		PDF FDG6308P SC70-6 SC70-6 FDG6308P

    FSA642

    Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
    Text: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		PDF

    CFL inverter circuit schematic diagram

    Abstract: FDV301N SOT23 T7525 codec 7525 IGBT application note AN-9006 CFL 12v inverter circuit schematic diagram free DC 12V layout amplifier mp3 player usb diagram circuit usb mp3 player with radio fm lcd FPF2195 AN-7525
    Text: P O RTA B L E S O L U T I O N S FC-7319_Portable_Bro.indd 1 1/17/08 4:29:01 PM FC-7319_Portable_Bro.indd 2 1/17/08 4:29:29 PM INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		PDF FC-7319 CFL inverter circuit schematic diagram FDV301N SOT23 T7525 codec 7525 IGBT application note AN-9006 CFL 12v inverter circuit schematic diagram free DC 12V layout amplifier mp3 player usb diagram circuit usb mp3 player with radio fm lcd FPF2195 AN-7525

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    FDG6332C

    Abstract: FDG6301N FDG6303N Complementary MOSFETs FDG328P FDG311N FDG313N FDG315N FDG327N FDG329N
    Text: Discrete MOSFET SC70-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SC70-6 N-Channel FDG6335N 20 Dual - 0.3 0.4 - 1.1 0.7 0.3 FDG327N 20 Single - 0.09 0.1 0.14 4.5 1.5


    Original     		PDF SC70-6 SC70-6 FDG6335N FDG327N FDG329N FDG311N FDG6303N FDG6301N FDG313N FDG315N FDG6332C FDG6301N FDG6303N Complementary MOSFETs FDG328P FDG311N FDG313N FDG327N FDG329N

    EQUIVALENT fds4435

    Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
    Text: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the


    Original     		PDF SC70-6, FDG6316P FDC6318P FDW2508P FDZ2554PZ FDZ2552P FDG6304P FDG6306P FDG6308P FDS6875 EQUIVALENT fds4435 MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    Untitled

    Abstract: No abstract text available
    Text: LTC4079 60V, 250mA Linear Charger with Low Quiescent Current Features n n n n n n n n n n n n n Description Wide Input Voltage Range: 2.7V to 60V Adjustable Battery Voltage: 1.2V to 60V Adjustable Charge Current: 10mA to 250mA Low Quiescent Current While Charging: IIN = 4µA


    Original     		PDF LTC4079 250mA 250mA 10-Lead LTC4071 LTC4070 LTC4121/ LTC4121-4 400mA com/LTC4079

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08