Untitled
Abstract: No abstract text available
Text: ESAB82M004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.0
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ESAB82M004
Voltage40
Voltage550m
StyleTO-220var
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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Schottky Diode 40V 5A
Abstract: ESAB82M-004
Text: ESAB82M-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching
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ESAB82M-004
SC-67
500ns,
Schottky Diode 40V 5A
ESAB82M-004
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010sc4m
Abstract: C120H04Q SOT227B S10SC3M s0241 C8P04Q C8P03Q BYV223V45 20/010SC4M
Text: SCHOTTKY RECTIFIERS Item Number Part Number 10 Max A VRRM IFSM (V) (A) VF IF Max @ Test (V) (A) Package Style Schottky Rectifiers, General-Purpose (Co nt' d) 5 10 SOHQ030 SOHQ035 0120SC4M SOHQ045 151MQ30 151MQ40 0180SC3M 0180SC4M 0240SC3M 0240SC4M 03S0SC3M
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SOHQ030
SOHQ035
0120SC4M
SOHQ045
151MQ30
151MQ40
0180SC3M
0180SC4M
0240SC3M
0240SC4M
010sc4m
C120H04Q
SOT227B
S10SC3M
s0241
C8P04Q
C8P03Q
BYV223V45
20/010SC4M
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LT GBL406
Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Text: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA
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5CE10
5CE100
5CE100A
5CE100C
5CE100CA
5CE10A
5CE10C
5CE10CA
5CE11
5CE110
LT GBL406
SMBJ8.5CA
2KBP206
TS820-800T
LT KBJ608G
T1M5F600A
31DQ100
30BQ050
BYM95C
SB0100
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SE024
Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Text: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A
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SE014
SE036
SE059
SC802-04
SC802-06
SC802-09
ERA82-004
ERA83-006
ERA85-009
ERA83-004
SE024
ERB12
ESAD81-004
ERA1506
ERB30
ESAB82M-006
esac6
ERD03-04
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ESAB82M-004
Abstract: ccd120 WA3T
Text: ESAB82M-004 5 a è±/J'i *^ ì - k 5sa% y H r — ' * l) 7 ÿ 4 ‘ Outline D raw ings K SCHOTTKY BARRIER DIODE 4 .5 MAX. 2.0 o -o U z : Features JEDEC SC-67 EIAJ Insulated package by fully m o ld in g . • 1&VF • Low VF fcT-K C onnection Diagram Super high speed sw itching.
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ESAB82M-004
SC-67
500ns
ccd120
WA3T
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ERC24-06
Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Text: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08
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BRA-18-02
ERA48-04
A22-02
ERA22-04
ERA22-0G
ERA22-08
A22-10
ERA82-004
ERA91-02
ERA38-04
ERC24-06
ERA21-06
ERA18
era-84
ERA15-04
ESAD75-02
ERC24-04
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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ESAD81
Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Text: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004
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SC802-06
ERA83-006
ERB83-006
ERC81
SC802-09
ERA85-009
ERA84-009
ERB84-009
ERC84-009
O-220F
ESAD81
ESAC6
erb12
ESAD81-004
era-84
SCHOTTKY -004
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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ESAD81-004
Abstract: SE024 ESAD81 ESAC6
Text: Schottky-Barrier Diodes Dual package • 25307^2 oogiei^ ? ■ r-^3-07 collmer semiconductor INC 2se j> •¿3- Û ? Ratings and characteristics Maximum ratings lo “ V rrm Volts Amps. Type Thermal ratings I fsm * 2 Tj and Tstg Amps, •c I rrm * 3 Max. mA
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To--100
O-22QAB
ESAD81-004
SE024
ESAD81
ESAC6
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erc24-06
Abstract: ERB06-15 ERC47-02 ERA91-02 erc24 ERC2406 ESAD81-004 ERA18-02 ERB29-04 ERC24-04
Text: This Material Copyrighted By Its Respective Manufacturer Fast R eco very D iodes S ingle psckage • 223ñ7^2 0001271 s ■ r-oh-oi collmer semiconductor inc ese » Ratings and characteristics Thermal ratings Ifsm * 2 Tj and Tstg Amps. •c Characteristics Te1 = 25 -0
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FRA15-01
ERA15-02
ERA15-06
ERAI5-08
ERA15-10
ERA48-02
ERA48-04
ERA22-02
ERA22-04
ERA22-0G
erc24-06
ERB06-15
ERC47-02
ERA91-02
erc24
ERC2406
ESAD81-004
ERA18-02
ERB29-04
ERC24-04
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ESAB82M-004
Abstract: No abstract text available
Text: E S A B 8 2 M - 4 5 a è ± / J ' i * ^ ì - k ‘ Outline Drawings SCHOTTKY BARRIER DIODE 0.4-1 1-2.7 I t t A : Features JEDEC Insulated package by fully m olding. SC-67 EIAJ >1&VF Low V F * Connection Diagram XfcT-K Super high speed switching. High reliability by planer design.
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ESAB82M-004
SC-67
500ns
eaTS30Â
l95t/R89
Shl50
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SE024
Abstract: No abstract text available
Text: C O L L ME R S E M I C O N D U C T O R INC MAE D 22367*12 D D O I SÔ I 74fl « C O L Schottky/General Purpose Diodes € " P o\~\J> Schottky “Quick Reference” Selection Guide PACKAGE S I N G L E lo A Pkg. SURFACE MOUNT SE014 SC802-04 1 1 AXIAL ERA82-004
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SE014
SC802-04
ERA82-004
ERA83-004
ERA81-004
ERB81
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
SE024
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