csc 2314
Abstract: 2000A power diode qrr E1500VF450 5985A 2000A power diode
Text: An IXYS Company Provisional Data Data Sheet Issue:- 2 WESTCODE Date:- 15 Feb, 2005 Absolute Maximum Ratings VOLTAGE RATINGS High Power Sonic FRD Type E1500VF450 MAXIMUM LIMITS UNITS Repetitive peak reverse voltage, note 1 4500 V VRSM Non-repetitive peak reverse voltage, (note 1)
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E1500VF450
E1500VF450
csc 2314
2000A power diode qrr
5985A
2000A power diode
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IGCT 4.5kv
Abstract: E2000NC140 E2000NC170 snubber IGCT E1500VF400 IGCT kv 1340 WESTCODE
Text: HP Sonic-FRDs - EXPANDED PRODUCT BRIEF EXPANDED PRODUCT BRIEF IFAV High Power Sonic-FRDs Fast Recovery Diodes May 2006 Issue 2 Introducing a new class of ultra fast, ultra soft recovery diodes The devices are available from 1.7 kV to 4.5kV in current ratings from 300 A to 2500 A
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D-68623
IGCT 4.5kv
E2000NC140
E2000NC170
snubber IGCT
E1500VF400
IGCT
kv 1340
WESTCODE
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T1200EB45E
Abstract: No abstract text available
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T1200EB45E
T1200EB45E
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets
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T1200EB
Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T1200EB45E
T1200EB45E
T1200EB
LA 4750 n
transistor polar
D-68623
T1200
133nF
Gate Drive Characteristics
IGBT1200A
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