DRA03TE Search Results

DRA03TE Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DRA03TE		Unknown	Power and Industrial Semiconductors Data Book		Scan	PDF
DRA03TE		Sanyo Semiconductor	THYRISTOR SCR WITH REVERSE DIODE 300V 9A 3TO-92		Scan	PDF
DRA03TE		Sanyo Semiconductor	0.3A Reverse Blocking Thyristor		Scan	PDF

DRA03TE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B	PDF
m21ca Abstract: SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 DCR 1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN ~~~~~~ 15 20 BTX1B-300 40C35 40C35B 55C35 55C35B 55C35BF 55C35F 70C35B jgg5~!jt25 30	Original	1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN m21ca SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk	PDF
DRA03TE Abstract: DRA05E T0202 T092 Text: Reverse-blocking Thyristors VRM V IT (A) let (mA) VGT(V) - 0.2 0.8 T092 - 1 0.8 T092 (built-in resistor) DRA2TE DRA2TG 0.2 0.8 T0202 3.0 DRE3E ORE3G 0.2 0.8 T0202 5.0 DRA5E DRA5G 40 1.5 T0220 8.0 DRA8E DRA8G 40 1.5 T0220 400 600 0.3 DRA03TE 0.5 DRA05E 2.0	OCR Scan	DRA03TE DRA05E T0202 T0220 T0202 T092	PDF
S6111 Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20 Text: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo	OCR Scan	2-10ms SG16AA40 SG16AA60 SG25AA20 SG25AA40 SG25AA60 H-101 S6111 DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40	PDF
SY 356 Abstract: sy 171 S6146G SF0R1A42 Sfor1a42 DRA01B DRA01C DRA01E DRA03TB DRA03TC Text: - Si 1 Vth 1. 50 1. 50 1. 40 1. 40 1.40 2. 00 2. 00 2. 00 2. 00 1. 60 1, 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 2. 50 2. 50 2. 50 2. 00 2.00 2. 00 2. 00 1 . 60 1 . 60 1 . 60 1 . 60 1 . 60 1. 60 1. 60 1. 60 1. 50 1. 50 1. 50 1 . 60 2. 30 Tj °C 25 25 25 25	OCR Scan	SG16AA40 SG16AA60 SG25AA20 SG25AA40 H-101 SY 356 sy 171 S6146G SF0R1A42 Sfor1a42 DRA01B DRA01C DRA01E DRA03TB DRA03TC	PDF
SGD-100 Abstract: SGD-100T SPD-121 SPD-121A SPD-121M SPD-121P SPD-122P SPD-221 SPD-221A Text: Packaged GaAs Schottky Barrier Diodes Single diodes Electrical characteristics iT-, = 25 C Absolute maximum ratings Package type Device SPD-121 Ceramic Applications C- to X-band applications, DBS and measuring instruments c, t ÿ Rs Lc @ P -f If Vr IV) lo	OCR Scan	SPD-121 SPD-121M SPD-121P SPD-122P SPD-221 DTA05E T0202 T0220 SGD-100 SGD-100T SPD-121A SPD-221A	PDF
SHS210 Abstract: SHS361 Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)	OCR Scan	SBL-12Ì SBL-801« SBL-802* SBL-803® SBL-804» SBL-221® SHS264 SHS311 SHS320 SHS330 SHS210 SHS361	PDF
SFOR1A42 Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C Text: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o	OCR Scan	2-10ms SG16AA40 SG16AA60 SG25AA20 SG25AA40 SG25AA60 H-101 SFOR1A42 SY 356 S6370 SF0R1A42 sy 171 S6111 sj 2025 DRA01B DRA01C	PDF
DRA03TE Abstract: DRA03T DRA03TB DRA03TC DRA03TG T092 Text: Ordering number : EN1881A I SA\YO DRA^T N0.I88IA Silicon Plan ar Type i 0.3A Reverse Blocking Thyristor Features •Low-power switching and control •Sm all size and light weight ■Peak OFF-state reverse voltage : —100 to —600V •Average ON-state cu rren t: 0.3A	OCR Scan	EN1881A I88IA -600V DRA03TB DRA03TC DRA03TE DRA03TG DRA03T T092	PDF