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    DDD11 Price and Stock

    TE Connectivity PRDDD1-16F-BB000

    SWITCH ROCKER DPDT 16A 125V
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    DigiKey PRDDD1-16F-BB000 Bulk 107 1
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    Avnet Americas PRDDD1-16F-BB000 Tray 32 Weeks, 4 Days 500
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    Newark PRDDD1-16F-BB000 Bulk 500
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    Master Electronics PRDDD1-16F-BB000 436
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    TE Connectivity PRDDD1-16F-BB0DW

    SWITCH ROCKER DPDT 16A 125V
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    Abracon Corporation AMPMDDD-11.0590T3

    MEMS Crystal Oscillator 11.059MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMDDD-11.0590T3)
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    Avnet Americas AMPMDDD-11.0590T3 Reel 3,000
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    Avnet Abacus AMPMDDD-11.0590T3 113 Weeks 3,000
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    Abracon Corporation AMPMDDD-11.2896

    MEMS Crystal Oscillator 11.2896MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMDDD-11.2896)
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    Avnet Abacus AMPMDDD-11.2896 113 Weeks 1,000
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    Abracon Corporation AMPMDDD-11.0590

    MEMS Crystal Oscillator 11.059MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMDDD-11.0590)
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    Avnet Abacus AMPMDDD-11.0590 113 Weeks 1,000
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    DDD11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDD11

    Abstract: A 1941
    Text: DDD11 page 1 2 3 4 5 sheet 011241-a 011241-b 020342-a 020342-b FP date 1941 1941 1942 1942 2000.03.04


    Original
    PDF DDD11 011241-a 011241-b 020342-a 020342-b DDD11 A 1941

    BR17

    Abstract: No abstract text available
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


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    PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x+ 16-/32-Bit DDR2-667 BR17

    7813 Texas Instruments Transistor

    Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
    Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original
    PDF TMS320C6474 SPRS552H TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 7813 Texas Instruments Transistor TMS320C6000 C6000 C6474 C64X SPRS552H BR17

    transistor d880

    Abstract: BR17
    Text: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns


    Original
    PDF TMS320C6474 SPRS552E TMS320C6474 C6474) 850-MHz TMS320C64x 16-/32-Bit DDR2-667 transistor d880 BR17

    Untitled

    Abstract: No abstract text available
    Text: EUPEC blE D • 3MD3ST7 DDD1131 T71 ■ U P E C TZ 425 N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspannung repetitive peak forw ard off-state and reverse voltages


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    PDF DDD1131 D001134

    STA411A

    Abstract: TIC 160 M TIC 31 DDD11E
    Text: SANKEN ELECTRIC CO LTD SSE ]> 7^0741 DDD11EÔ LTT « S A K J STA411A Silicon NPN Triple Diffused Planar •Maximum Ratings . Item Ta = 25“C Symbol Ratings Unit Collector-to-B ase Voltage VCBO 60 V C ollector-to-E m itter Voltage VCEO 60 V Em itter-to-Base Voltage


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    PDF DDD11EÔ STA411A STA300 STA400 45max STA411A TIC 160 M TIC 31 DDD11E

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY b3E D • QES7TOT DDD112G 637 MAVP A dvanced pow er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50fl POWER MOS IV' N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT806R5KN UNIT 800


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    PDF DDD112G APT806R5KN O-22QAC

    Untitled

    Abstract: No abstract text available
    Text: V T C IN C -9398929 V T C INC cn 99D . j> r| T 3 flfl‘i 2 cl DDD113E D 01132 r - S 2-3 V54AC643 V74AC643 O C T A L BUS TRAN SCEIVERS WITH 3-STATE O U TPU TS FEATURES •High Speed, 4ns Typical •Ini /I o h “ 24mA Commercial, UL 24mA Military


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    PDF DDD113E V54AC643 V74AC643

    VTT1112

    Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
    Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)


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    PDF 3030bCH DDD11Ã VTT1112, T-41-61 VTT1112 VTT1113 VTT1114 transistor T2S DDD11 0 205 001 040 transistor c 4161

    EUPEC powerblock tt142

    Abstract: EUPEC tt 170 n 14 EUPEC TT 56 n 12 EUPEC POWERBLOCK TD powerblock tt 60 N EUPEC tt 106 n 16 EUPEC tt 142 n 16 powerblock TD 170 N DT142N I300
    Text: LIE EUPEC 34032=17 D DDD11Q2 170 IUPEC TT 142 N, TD 142 N, DT 142 N Elektrische Eigenschaften Electrical properties M a x im u m ra ted v a lu e s Mdrm.V rrm P e rio d is c h e V o rw ä rts - u n d R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g re p e titiv e p e a k fo rw a rd o ff-s ta te


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    PDF TT142 DT142N EUPEC powerblock tt142 EUPEC tt 170 n 14 EUPEC TT 56 n 12 EUPEC POWERBLOCK TD powerblock tt 60 N EUPEC tt 106 n 16 EUPEC tt 142 n 16 powerblock TD 170 N DT142N I300

    Untitled

    Abstract: No abstract text available
    Text: GENNUn CORP HflE » GENNUM C O R P O R A T I O N 3T3S763 DDD1116 T2b • LTIC Class A Amplifier with 2 DC Coupled Gain Blocks & Schottky Diodes GK5G9 PRELIMINARY DATA SHEET 7~Z. FEATURES DESCRIPTION • 100 nA typical current drain The GK509 is a Class A amplifier utilizing Gennum’s


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    PDF 3T3S763 DDD1116 GK509

    Vactec

    Abstract: DDD11 VTT1112 VTT1113 VTT1114
    Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)


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    PDF 3030bCH DDD11Ã VTT1112, T-41-61 VTT1112 VTT1113 VTT1114 Vactec DDD11

    42321

    Abstract: 7424A
    Text: SQEbfl7E DDD111S Eb3 • T H C M SSE D O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX THX 7424A 150 PIXEL SWIR MULTIPLEXED LINEAR ARRAYS FOR SPECTROSCOPY APPLICATION THOMSON MIL ET SPATIAUX DESCRIPTION The THX 7424A is a module of 150 InGaAs photodiodes and associated CCD readout circuits, issued of the develop­


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    PDF DDD111S i02bfl72 DG01125 THX7424A THX7424AVAA THX7424AVAB THX7424AVAC THX7424AVAD 42321 7424A

    Untitled

    Abstract: No abstract text available
    Text: bSE T> m ÛUALITY SEMICONDUCTOR INC 74bbñ03 DDD11SÜ 3S2 QSFCT153T, 253T, 2153T, 2253T Q S54/74FCT153T Q S54/74FCT253T High-Speed CMOS Dual 4 Input Multiplexers Q Q S54/74FCT2153T Q S54/74FCT2253T FEATURES/BENEFITS • Pin and function compatible to the 74F153/253


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    PDF DDD11SÃ QSFCT153T, 2153T, 2253T S54/74FCT153T S54/74FCT253T S54/74FCT2153T S54/74FCT2253T 74F153/253 74FCT153/253

    GMSK wireless data transmission

    Abstract: BT 199 DDD11 FX589 FX589D5 FX589DW FX589P bt 137 good FX589 Application Notes
    Text: eooq = 3 CML Semiconductor Products PRODUCT INFORMATION FX589 Low-Voltage/High-Speed GMSK Modem Publication D/589/5 December 1995 Features Applications • • Wireless LAN/Modems • Handy Data Terminals • Low-Power Wireless Data Link for PCs, Laptops and Printers


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    PDF FX589 40kb/s STD-18 D/589/5 FX589 FX589DW 24-pin FX589D5 GMSK wireless data transmission BT 199 DDD11 FX589P bt 137 good FX589 Application Notes

    Untitled

    Abstract: No abstract text available
    Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used


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    PDF PSX160, PSX128B PSX96B. has27 DDD11SG

    CY7C006

    Abstract: CY7C016
    Text: fax id: 5207 ,.V.Ï.Ï.V.^ y nr' CY7C006 CY7C016 Æ C Y P R E S S 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s read s o f th e s a m e m e m o ry location 16K x 8 o rg an iza tio n C Y 7 C 00 6


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    PDF CY7C006) CY7C016) 65-micron 68-pin 64-pin 7C006) 80-pin 7C016 CY7C006 CY7C016

    NSf39

    Abstract: IR 0251 CY7C024 CY7C0241 CY7C025 CY7C0251 017L
    Text: fax id: 5206 CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s reads of th e s a m e m e m o ry location • 4K x 16 o rg an iza tio n C Y 7 C 02 4


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    PDF CY7C024/0241 CY7C025/0251 CY7C024) CY7C0241) CY7C025) CY7C0251) 65-micron 84-Lead CY7C024/0241 NSf39 IR 0251 CY7C024 CY7C0241 CY7C025 CY7C0251 017L

    Untitled

    Abstract: No abstract text available
    Text: LM78L00 Series 3-Terminal Low Current Positive Voltage Regulators Semiconductor t h r e e -t e r m in a l l o w c u r r e n t p o s it iv e v o l t a g e r e g u l a t o r s The positive LM78LOO voltage inexpensive, Series of cousins, these regulators feature


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    PDF LM78L00 LM78LOO LM78LOO

    Untitled

    Abstract: No abstract text available
    Text: MIVR 4 2 0 5 4 NEGATIVE HIGH VOLTAGE REGULATOR Designed for use in general purpose power supplies with high input voltages • Output current to 5 amps Input voltage to -65V D.C. Internal short circuit protection, foldback and current limiting Excellent line and load regulation


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    PDF 42051ure 120WATTSAT25Â bll2b40 DDD11E5

    TA 7818 S voltage regulator

    Abstract: 7818 CT lm 7809 to-92
    Text: PCI LM7800 Series 3-Terminal Fixed Voltage Regulators Semiconductor [t h r e e -t e r m in a l These voltage I p o s it iv e v o l t a g e r e g u l a t o r s regulators are monolithic compensation. With adequate heatsinking they can deliver output currents in excess of 1.5 ampere.


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    PDF LM7800 LM78XX 20mA- TA 7818 S voltage regulator 7818 CT lm 7809 to-92

    DDA09

    Abstract: No abstract text available
    Text: CYM7232 CYM7264 DRAM Accelerator Module PRELIMINARY CYPRESS SEMICONDUCTOR Features • 4-megabyte to 1-gigabyte control ca­ pability • 32- or 64-bit bus interface M7232 only • 32* or 64-bit EDC versions — 1-bit correct; 2-bit detect • Multiplexed or non-multiplexed bus


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    PDF CYM7232 CYM7264 64-bit M7232 40-MHz 25-ns read/80-ns InhibitYM7232Sâ DDA09

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5206 W CYPRESS CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description True Dual-Ported memory cells which allow simultaneous reads of the same mem ory location 4K x 16 organization CY7C024


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    PDF CY7C024/0241 CY7C025/0251 CY7C024) CY7C0241) CY7C025) CY7C0251) 65-micron 84-Lead

    Untitled

    Abstract: No abstract text available
    Text: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­


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    PDF O-218 O-202 O-202 O-220 BR601