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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ166A GaAs HALL-EFFECT ELEMENTS CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.	Original	PDF	CYSJ166A D-85464
CYSJ166A Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ166A GaAs HALL-EFFECT ELEMENTS CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.	Original	PDF	CYSJ166A D-85464

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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ166A GaAs HALL-EFFECT ELEMENTS CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

Original

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CYSJ166A D-85464

CYSJ166A