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    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology.


    Original     		PDF CYSJ106C D-85464

    CYSJ106C

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.


    Original     		PDF CYSJ106C D-85464

    CYSJ106C

    Abstract: 2X100
    Text: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.


    Original     		PDF CYSJ106C D-85464 2X100