CYK256K16MCCB Search Results

CYK256K16MCCB Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CYK256K16MCCB		Cypress Semiconductor	4-Mbit (256K x 16) Pseudo Static RAM		Original	PDF
CYK256K16MCCBU-55BVI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 55NS 48FBGA		Original	PDF
CYK256K16MCCBU-55BVXI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 55NS 48FBGA		Original	PDF
CYK256K16MCCBU-60BVI		Cypress Semiconductor	4-Mbit (256K x 16) Pseudo Static RAM		Original	PDF
CYK256K16MCCBU-70BVI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA		Original	PDF
CYK256K16MCCBU-70BVXI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA		Original	PDF

CYK256K16MCCB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB 48-ball I/O15) CYK256K16MCCB
CYK256K16MCCB Abstract: No abstract text available Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB I/O15) 70-ns 60-ns CYK256K16MCCB CYK256K16MCCBU
CYK256K16MCCB Abstract: 60bvi Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB I/O15) 70-ns CYK256K16MCCB 60-ns 60bvi
CYK256K16MCCB Abstract: No abstract text available Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB I/O15) CYK256K16MCCB
Untitled Abstract: No abstract text available Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB 70-ns 48-ball I/O15) 60-ns CYK256K16MCCBU
CYK256K16MCCB Abstract: ultra fine pitch BGA Text: CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB I/O15) 70-ns 48kage 60-ns CYK256K16MCCB CYK256K16MCCBU ultra fine pitch BGA
Untitled Abstract: No abstract text available Text: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both	Original	PDF	CYK256K16MCCB 48-ball I/O15) CYK256K16MCCB