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    Abstract: No abstract text available
    Text: PROCESS CP761R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94 MILS Source Bonding Pad Area 3.94 x 7.08 MILS Top Side Metalization Al-Si - 35,000Å


    Original     		CP761R CEDM8001 CMNDM8001 PDF