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CGHV96100F2 Price and Stock

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MACOM CGHV96100F2-AMP CGHV96100F2 DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2-AMP	Box	4		1	1 $1378.61 10 $1378.61 100 $1378.61 1000 $1378.61 10000 $1378.61	Buy Now
Richardson RFPD	CGHV96100F2-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV96100F2 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2	Tray			1	1 $999.72 10 $999.72 100 $999.72 1000 $999.72 10000 $999.72	Buy Now
Mouser Electronics	CGHV96100F2					1 $997.72 10 $997.72 100 $997.72 1000 $997.72 10000 $997.72	Get Quote
Richardson RFPD	CGHV96100F2				1	1 $1496.16 10 $1496.16 100 $1496.16 1000 $1496.16 10000 $1496.16	Buy Now

CGHV96100F2 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGHV96100F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W		Original	PDF
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT		Original	PDF
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT		Original	PDF
CGHV96100F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2		Original	PDF

CGHV96100F2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	PDF	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2
40VPulse Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	PDF	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	PDF	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2
CGHV96100F2 Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	PDF	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	PDF	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2