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Text: VDS 1200 V ID @ 25˚C 10 A C2M0280120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 280 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive