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    Text: 7 C1ECIE37 G O m ^ l 513 • S 6 T H SGS-THOMSON £ t7 :G Jû T [M 0 gS S T P 5 N8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP5N 80XI V dss R d S (o ii Id 800 V < 2 .4 n 2 .6 A ■ T Y P IC A L RDS(on) = 1.9 £2 ■ . ■ . . . AVALANCHE RUGGED TECHNOLOGY


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