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TT Electronics Power and Hybrid / Semelab Limited BUZ905 P Channel Mosfet, -160V, 8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes \|Tt Electronics/semelab BUZ905
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	BUZ905	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	BUZ905		9			1 $12 10 $9 100 $9 1000 $9 10000 $9	Buy Now
TT Electronics Power and Hybrid / Semelab Limited BUZ905D P Channel Mosfet,-160V, 8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes \|Tt Electronics/semelab BUZ905D
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Newark	BUZ905D	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TT Electronics Power and Hybrid / Semelab Limited BUZ905P P Channel Mosfet, -160V, -8A, To-247; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes \|Tt Electronics/semelab BUZ905P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	BUZ905P	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
. BUZ905P Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BUZ905P		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
sml BUZ905DP MOS PRODUCT Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BUZ905DP		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUZ905 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
BUZ905	Magnatec	P-CHANNEL POWER MOSFET	Original	PDF
BUZ905	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ905D	Magnatec	P-CHANNEL POWER MOSFET	Original	PDF
BUZ905D	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ905DP	Magnatec	P-CHANNEL POWER MOSFET	Original	PDF
BUZ905P	Magnatec	P-CHANNEL POWER MOSFET	Original	PDF
BUZ905P	Magnatec	P-channel Power Mosfet	Original	PDF
BUZ905P	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ905X4S	Magnatec	P-CHANNEL POWER MOSFET	Original	PDF

BUZ905 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ900P Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	PDF	BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
Untitled Abstract: No abstract text available Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING	Original	PDF	BUZ905D BUZ906D BUZ900D BUZ901D
Untitled Abstract: No abstract text available Text: BUZ905 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55	Original	PDF	BUZ905
BUZ905X4S Abstract: BUZ906X4S 200v 100mA mosfet n-channel 500w power mosfet Text: BUZ905X4S BUZ906X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )	Original	PDF	BUZ905X4S BUZ906X4S 59Saturation 100mA BUZ905X4S BUZ906X4S 200v 100mA mosfet n-channel 500w power mosfet
BUZ906 Abstract: BUZ905 BUZ901 BUZ900 Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING	Original	PDF	BUZ905 BUZ906 BUZ900 BUZ901 -160V BUZ90 BUZ906 BUZ905 BUZ901 BUZ900
Untitled Abstract: No abstract text available Text: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING	Original	PDF	BUZ905 BUZ906 BUZ900 BUZ901
BUZ906D Abstract: BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP BUZ906D BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D
Untitled Abstract: No abstract text available Text: BUZ905D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)16.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55	Original	PDF	BUZ905D
Untitled Abstract: No abstract text available Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	PDF	BUZ905P BUZ906P
Untitled Abstract: No abstract text available Text: BUZ905P Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55	Original	PDF	BUZ905P
Untitled Abstract: No abstract text available Text: BUZ905X4S BUZ906X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )	Original	PDF	BUZ905X4S BUZ906X4S 100mA
Untitled Abstract: No abstract text available Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP
BUZ906D Abstract: BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING	Original	PDF	BUZ905D BUZ906D BUZ900D BUZ901D BUZ906D BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D
Audio Power Amplifier MOSFET TOSHIBA Abstract: LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139 Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1645 Troy Huebner 2007౎5ሆ ᆅჾ සࢆ჋ስMOSFET !!!!Ԩᆌᆩጀ๥༵ࠃକ࠲ᇀெࡔࡔॆӷ‫༹ڞ‬ፌႎ‫ߛڦ‬Ⴀ āāLM4702‫ڦ‬༬Ⴀ၌዆କ‫ܔ‬MOSFETഗॲ‫ڦ‬჋ስăፌዘ ీĂ‫ߛג‬ԍኈ‫ڦ‬ᅼೕ‫ٷݣ‬ഗൻ‫ۯ‬IC‫ڦ‬ยऺኧ‫׼‬႑တă	Original	PDF	LM4702 100mA 25W/8 LM4072 Audio Power Amplifier MOSFET TOSHIBA LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139

2SK1058 MOSFET APPLICATION NOTES Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162 Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully	Original	PDF	LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
buz901 buz906 Abstract: BUZ905 magnatec mosfets BUZ901 BUZ906 Text: BUZ905 BUZ906 IV I A CB INI A MECHANICAL DATA P-CHANNEL POWER MOSFET Dim ensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING	OCR Scan	PDF	BUZ905 BUZ906 BUZ900 BUZ901 BUZ905 -160V -200V buz901 buz906 magnatec mosfets BUZ901 BUZ906
buz906dp Abstract: No abstract text available Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING	OCR Scan	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP buz906dp
BUZ901P Abstract: buz900p BUZ906P Text: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * 16.26 a o c i(0.640) ne/ni (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET	OCR Scan	PDF	BUZ905P BUZ906P BUZ900P BUZ901P -160V BUZ901P buz900p BUZ906P
Untitled Abstract: No abstract text available Text: BUZ905X4S BUZ906X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS A ài CO "T j 0.75 (0 .0 3 0 ) ^ 0.85 (0 .0 3 3 ) Ë* to CO FEATURES 1 JJJ J V • HIGH SPEED SWITCHING	OCR Scan	PDF	BUZ905X4S BUZ906X4S OT227 --10V --100mA -200V
BUZ905D Abstract: No abstract text available Text: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING	OCR Scan	PDF	BUZ905D BUZ906D BUZ900D BUZ901D
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED	OCR Scan	PDF	BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
30D40 Abstract: No abstract text available Text: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING	OCR Scan	PDF	BUZ900 BUZ901 BUZ905 BUZ906 BUZ901 30D40
Untitled Abstract: No abstract text available Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •	OCR Scan	PDF	BUZ905P BUZ906P O-247

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BUZ905 Search Results

BUZ905 Price and Stock

TT Electronics Power and Hybrid / Semelab Limited BUZ905

TT Electronics Power and Hybrid / Semelab Limited BUZ905D

TT Electronics Power and Hybrid / Semelab Limited BUZ905P

. BUZ905P

sml BUZ905DP

BUZ905 Datasheets (9)

BUZ905 Datasheets Context Search

BUZ900P

Untitled

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BUZ905X4S

BUZ906

Untitled

BUZ906D

Untitled

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BUZ906D

Audio Power Amplifier MOSFET TOSHIBA

2SK1058 MOSFET APPLICATION NOTES

irfb4115

buz901 buz906

buz906dp

BUZ901P

Untitled

BUZ905D

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

30D40

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