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    BUK9E06-55B Search Results

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    BUK9E06-55B Price and Stock

    Nexperia BUK9E06-55B,127

    MOSFET N-CH 55V 75A I2PAK
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    DigiKey BUK9E06-55B,127 Tube
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    NXP Semiconductors BUK9E06-55B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 234 W; Minimum DS Breakdown Voltage: 55 V; Terminal Finish: TIN;
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    Vyrian BUK9E06-55B 199
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    BUK9E06-55B Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9E06-55B NXP Semiconductors N-channel TrenchMOS FET Original PDF
    BUK9E06-55B Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9E06-55B Philips Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9E06-55B,127 NXP Semiconductors N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): [email protected]@[email protected] mOhm; Thermal Resistance: 0.58 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack Original PDF
    BUK9E06-55B,127 NXP Semiconductors BUK9E06-55 - TRANSISTOR 75 A, 55 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TO-220AB, I2PAK-3, FET General Purpose Power Original PDF