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    BTD2118J3 Search Results

    BTD2118J3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BTD2118J3 CYStech Electronics Low Vcesat NPN Epitaxial Planar Transistor Original PDF

    BTD2118J3 Datasheets Context Search

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    D2118

    Abstract: transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8
    Text: Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118J3 Features • Low VCE sat , VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics


    Original
    PDF C847J3 BTD2118J3 BTB1412J3 O-252 UL94V-0 D2118 transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8

    transistor b1412

    Abstract: b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3
    Text: Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BVCEO IC RCESAT BTB1412J3 -30V -5A 75mΩ typ. Features • Low VCE sat , VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A


    Original
    PDF C816J3 BTB1412J3 BTD2118J3 O-252 UL94V-0 transistor b1412 b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3

    transistor B1412

    Abstract: b1412 BTB1412J3 data sheet b1412 BTD2118J3
    Text: Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1412J3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics


    Original
    PDF C816J3 BTB1412J3 BTD2118J3 O-252 UL94V-0 transistor B1412 b1412 BTB1412J3 data sheet b1412 BTD2118J3