BLS6G3135-20; Search Results

BLS6G3135-20; Price and Stock

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Ampleon BLS6G3135-20,112 RF MOSFET LDMOS 32V CDFM2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLS6G3135-20,112	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics BLS6G3135-20,112 LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G3135-20,112)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BLS6G3135-20,112	Tray		16 Weeks	60	1 - 10 - 100 $164.3868 1000 $152.4555 10000 $152.4555	Buy Now

Part	Manufacturer	Description	Datasheet Type	PDF
BLS6G3135-20	NXP Semiconductors	BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power	Original	PDF
BLS6G3135-20	NXP Semiconductors	LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB	Original	PDF
BLS6G3135-20,112	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 60V 15.5DB SOT608A	Original	PDF
BLS6G3135-20,112	NXP Semiconductors	BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power	Original	PDF
BLS6G3135-20,112	NXP Semiconductors	LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB; Package: SOT608A (CDFM2); Container: Blister pack	Original	PDF
BLS6G3135-20i	NXP Semiconductors	BLS6G3135-20i LDMOS Transistor Model	Original	PDF