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    BFS17W Price and Stock

    NXP Semiconductors BFS17W,115

    RF TRANS NPN 15V 1.6GHZ SOT323-3
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    BFS17W,115 Digi-Reel 1
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    Bristol Electronics BFS17W,115 3,680
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    NXP Semiconductors BFS17W,135

    RF TRANS NPN 15V 1.6GHZ SOT323-3
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    Infineon Technologies AG BFS17WH6327XTSA1

    RF TRANS NPN 15V 1.4GHZ SOT323-3
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    BFS17WH6327XTSA1 Reel 15,000
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    Verical BFS17WH6327XTSA1 30,000 15,000
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    Arrow Electronics BFS17WH6327XTSA1 36,000 98 Weeks 15,000
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    BFS17WH6327XTSA1 Cut Strips 1 98 Weeks 1
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    Infineon Technologies AG BFS17WE6327HTSA1

    RF TRANS NPN 15V 1.4GHZ SOT323-3
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    Vishay Intertechnologies BFS17W-GS09

    Trans GP BJT NPN 15V 0.025A 3-Pin SC-70 T/R - Tape and Reel (Alt: BFS17W-GS09)
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    Avnet Americas BFS17W-GS09 Reel 15,000
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    Find more BFS17W price and stock on Findchips.com

    BFS17W Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFS17W Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFS17W Infineon Technologies Si RF Transistors, fT < 24 GHz; Package: PG-SOT323-3; VCEO (max): 15.0 V; IC(max): 25.0 mA; Ptot (max): 280.0 mW; fT (typ): 1.4 GHz; F (typ): 3.5 dB; Original PDF
    BFS17W . Infineon Technologies For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA Original PDF
    BFS17W. Infineon Technologies RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA Original PDF
    BFS17W NXP Semiconductors BFS17W - NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 .. Original PDF
    BFS17W Philips Semiconductors NPN 1 GHz wideband transistor Original PDF
    BFS17W Philips Semiconductors NPN Silicon RF Transistor Original PDF
    BFS17W Philips Semiconductors NPN 1 GHz Wideband Transistor Original PDF
    BFS17W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFS17W Siemens NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) Original PDF
    BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFS17W Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFS17W Philips Semiconductors NPN 1 GHz wideband transistor Scan PDF
    BFS17W,115 NXP Semiconductors NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
    BFS17W,115 NXP Semiconductors BFS17 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3, BIP RF Small Signal Original PDF
    BFS17W,135 NXP Semiconductors NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
    BFS17W,135 NXP Semiconductors BFS17W - NPN 1 GHz wideband transistor, SOT323 Package, Standard Marking, Reel Pack, SMD, Large Original PDF
    BFS17WE6327 Infineon Technologies TRANS GP BJT NPN 15V 0.025A 3SOT-323 T/R Original PDF
    BFS17WE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 15V SOT-323 Original PDF
    BFS17WE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 15V SOT-323 Original PDF

    BFS17W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BCR108W BFS17W
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W

    70.2 marking smd npn Transistor

    Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 70.2 marking smd npn Transistor transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23

    Untitled

    Abstract: No abstract text available
    Text: BFS17W NPN Silicon RF Transistor 3  For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17W VSO05561 OT323

    Untitled

    Abstract: No abstract text available
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs


    Original     		PDF BFS17W OT323

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038

    702 TRANSISTOR smd SOT23

    Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718

    70.2 marking smd npn Transistor

    Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23

    Untitled

    Abstract: No abstract text available
    Text: BFS17W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF BFS17W

    MBG240

    Abstract: BFS17 BFS17W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS


    Original     		PDF BFS17W OT323 BFS17W BFS17. MBC870 MBG240 BFS17

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1"

    mar 806

    Abstract: No abstract text available
    Text: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17W VSO05561 OT323 mar 806

    SOT343R

    Abstract: SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR
    Text: Semiconductors Philips RF wideband transistors and MMICs for wireless RF Wideband Transistors RF Wideband Transistors Type fT Vceo GHz (V) SOT23, NPN PMBHT10 PBR941 PBR951 SOT23, PNP PMBTH81 BFG310/XR BFG325/XR SOT323, NPN BFS17W PRF547 PRF957 SOT323, PNP


    Original     		PDF PMBHT10 PBR941 PBR951 PMBTH81 BFG310/XR BFG325/XR OT323, BFS17W PRF547 PRF957 SOT343R SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    BCR108W

    Abstract: BFS17W 1511V
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS17W Marking MCs Pin Configuration 1=B 2=E 3=C Package


    Original     		PDF BFS17W OT323 BCR108W BFS17W 1511V

    BFS17

    Abstract: BFS17W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer,


    Original     		PDF BFS17W OT323 BFS17W BFS17. MBC870 R77/02/pp8 BFS17

    70.2 marking smd npn Transistor

    Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W OT-23 2002/95/EC 2002/96/EC OT-323 BFS17 OT-23 70.2 marking smd npn Transistor smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17W transistor smd marking NA sot-23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		PDF BFS17W Q62702-F1645 OT-323

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic


    OCR Scan     		PDF BFS17W OT323 BFS17W BFS17. MBC870 711062b 711Dfl5b

    Untitled

    Abstract: No abstract text available
    Text: ViSH A Y _ ▼ BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For broadband amplifiers up to 1 GHz. Features • High power gain


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: bb53S31 OQBSEbb IBB « A P X Philips Semiconductors _ Preliminary specification NPN 1 GHz wideband transistor BFS17W N A PIER PHILIPS/DISCRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is


    OCR Scan     		PDF bb53S31 BFS17W OT323 BFS17W BFS17.

    BFS17

    Abstract: BFS17W
    Text: M Philips Semiconductors 711002b □ D b e1232 ôOb • P H I N ^elimlnary specification NPN 1 GHz wideband transistor DESCRIPTION BFS17W PINNING Silicon NPN transistor in a plastic SOT323 S-minl envelope. It is primarily Intended as a mixer, oscillator and IF amplifier in UHF


    OCR Scan     		PDF 711002b Dbe1232 BFS17W OT323 BFS17. OT323. BFS17

    BFS17W

    Abstract: MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic


    OCR Scan     		PDF BFS17W OT323 BFS17W BFS17. MBC870 MB0240 OT323. 711005b MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking