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    onsemi BC635

    TRANS NPN 45V 1A TO92-3
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    onsemi BC635ZL1

    TRANS NPN 45V 1A TO92
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    DigiKey BC635ZL1 Ammo Pack 12,000
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    Verical BC635ZL1 12,000 5,425
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    Rochester Electronics BC635ZL1 12,000 1
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    Rochester Electronics LLC BC635ZL1

    TRANS NPN 45V 1A TO92
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    DigiKey BC635ZL1 Bulk 4,438
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    NXP Semiconductors BC635,112

    TRANS NPN 45V 1A TO92-3
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    onsemi BC635RL1G

    TRANS NPN 45V 1A TO92
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    DigiKey BC635RL1G Reel 12,000
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    BC635 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC635 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    BC635 Infineon Technologies TRANS GP BJT NPN 45V 1A 3TO-92 Original PDF
    BC635 Motorola High Current Transistors Original PDF
    BC635 NXP Semiconductors 45 V, 1 A NPN medium power transistors Original PDF
    BC635 On Semiconductor High Current Transistors Original PDF
    BC635 Philips Semiconductors NPN medium power transistors Original PDF
    BC635 Philips Semiconductors Small-signal Transistors Original PDF
    BC635 Siemens Cross Reference Guide 1998 Original PDF
    BC635 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC635 Siemens Transistor / Diode Selection Guide Original PDF
    BC635 Siemens NPN Silicon AF Transistor Original PDF
    BC635 STMicroelectronics SMALL SIGNAL NPN TRANSISTOR Original PDF
    BC635 Various Russian Datasheets Transistor Original PDF
    BC635 Bharat Electronics Shortform Transistor Data Short Form PDF
    BC635 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC635 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC635 Micro Electronics Silicon Transistors Scan PDF
    BC635 Micro Electronics Medium Power Amplifiers and Switches Scan PDF

    BC635 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc736

    Abstract: BC635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639 PDF

    bc639

    Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		BC635/637/639 BC635 BC637 BC639 bc639 BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639 PDF

    bc639

    Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent PDF

    bc639

    Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M PDF

    bc639

    Abstract: BC63x BC639-16ZL1 BC637
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637


    Original     		BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1 PDF

    bc639

    Abstract: BC637 BC635 BC635 TRANSISTOR E C B
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    BC639

    Abstract: BC635 BC637 transistor bc639 BC639-10
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC635/637/639 TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		BC635/637/639 BC635 BC637 BC639 BC639 BC635 BC637 transistor bc639 BC639-10 PDF

    BC635

    Abstract: TBC635
    Text: BC635 Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application. TO-92 Plastic Package


    Original     		BC635 BC635 TBC635 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC635 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


    Original     		BC635 Freq200MÃ PDF

    transistor BC636

    Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
    Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR PDF

    bc639

    Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		BC635 BC637 BC639 BC635 BC637 bc639 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector PDF

    bc639

    Abstract: BC635 BC637
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		BC635 BC637 BC639 BC635 BC637 bc639 PDF

    BC635 TRANSISTOR E C B

    Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


    Original     		M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note PDF

    BC639

    Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage


    Original     		BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050 PDF

    IRIG B generator

    Abstract: IRIG B TANS III GPS IRIG B time sync hardware IRIG-b irig b converter NASA36 IRIG am output circuit bc350VXI IRIG amplitude
    Text: bc635VME/bc350VXI Time and Frequency Processor 8500-0019 User’s Guide Rev. D June 2000 This Page Intentionally Left Blank Declaration of Conformity Application of Council Directive s Standard(s) to which Conformity is Declared 89/336/EEC EN 50081-1, EN 50082-1


    Original     		bc635VME/bc350VXI 89/336/EEC bc635VME/350VXI bc635VME/bc350VXI IRIG B generator IRIG B TANS III GPS IRIG B time sync hardware IRIG-b irig b converter NASA36 IRIG am output circuit bc350VXI IRIG amplitude PDF

    transistor C639

    Abstract: transistor C635 c639 transistor C639 w
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635


    OCR Scan     		BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w PDF

    BC838

    Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
    Text: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		BC635, BC637, BC639 BC636, BC638, BC640 BC635 T0-92 BC838 BC640 bc636 npn transistor BC63 transistor BC639 BC636 BC637 BC638 BC639 PDF

    BC640

    Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
    Text: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.


    OCR Scan     		bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640 bc639 bc638-10 BC635 BC636-10 bc636 npn transistor Silicon Epitaxial Planar Transistor philips PDF

    BC635

    Abstract: No abstract text available
    Text: Transistors BC635 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage at R BE = 1Kohm VcER 45 V Collector Emitter Voltage VcES 45 V Collector Emitter Voltage


    OCR Scan     		BC635 BC635 PDF

    bc 148 npn transistor

    Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
    Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)


    OCR Scan     		BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor PDF

    63516

    Abstract: 635-16 63916 Bc 649
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A


    OCR Scan     		BC635; BC637; BC639 BC636, BC640. BC635 115002/00/03/pp8 63516 635-16 63916 Bc 649 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage


    OCR Scan     		BC636/638/640 BC635/637/639 BC636 BC638 BC640 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.


    OCR Scan     		D27SC BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 PDF