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    AM29F016 Price and Stock

    Infineon Technologies AG AM29F016D-120DPI 1

    NOR Flash Parallel 5V 16M-bit 2M x 8 120ns 38-Pin Die
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics AM29F016D-120DPI 1 7 110 Weeks 180
    • 1 $4.36
    • 10 $4.36
    • 100 $4.36
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    AMD AM29F016-90EC

    Flash Memory - Parallel - 5V - 16M-Bit - 2M x 8 - 90ns - 48-Pin TSOP Package.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com AM29F016-90EC 1,994
    • 1 $70.05
    • 10 $21.8
    • 100 $19.53
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    Quest Components AM29F016-90EC 41
    • 1 $12
    • 10 $6
    • 100 $5.2
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    ComSIT USA AM29F016-90EC 4
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    Spansion AM29F016D-120F4C\\T

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    Bristol Electronics AM29F016D-120F4C\\T 692
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    AMD AM29F016B-120EC

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    Bristol Electronics AM29F016B-120EC 253
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    ComSIT USA AM29F016B-120EC 65
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    NexGen Digital AM29F016B-120EC 4
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    Velocity Electronics AM29F016B-120EC 20
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    Component Electronics, Inc AM29F016B-120EC 71
    • 1 $6.15
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    • 100 $4.62
    • 1000 $4
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    AMD AM29F016D-120E4C

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    Bristol Electronics AM29F016D-120E4C 247
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    Find more AM29F016 price and stock on Findchips.com

    AM29F016 Datasheets (433)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Am29F016 Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F016-120 Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120EC Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120EC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F016-120ECB Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120EE Advanced Micro Devices EEPROM Parallel Async Original PDF
    AM29F016-120EEB Advanced Micro Devices EEPROM Parallel Async Original PDF
    AM29F016-120EFCB Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,Sector Erase Flash Memory Original PDF
    AM29F016-120EI Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120EI Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F016-120EIB Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120FC Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120FC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F016-120FCB Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120FE Advanced Micro Devices EEPROM Parallel Async Original PDF
    AM29F016-120FEB Advanced Micro Devices EEPROM Parallel Async Original PDF
    AM29F016-120FI Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120FIB Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F016-120SC Advanced Micro Devices 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    ...

    AM29F016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    9018

    Abstract: AM29F016 EDI7F332MC
    Text: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and


    Original     		PDF EDI7F332MC 2Megx32 2Megx32 EDI7F332MC EDI7F2332MC AM29F016 150ns EDI7F332MC-BNC A0-A20 9018 AM29F016

    Untitled

    Abstract: No abstract text available
    Text: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements


    Original     		PDF Am29F017B Am29F016C 20-year 40-pin 48-pin

    known good die AMD

    Abstract: ACN2016 AMD 21551
    Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology


    Original     		PDF Am29F016B ACN2016) known good die AMD ACN2016 AMD 21551

    SA10

    Abstract: SA11 SA12 SA13 SA14 SA15
    Text: PRELIMINARY Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation


    Original     		PDF Am29F017B Am29F016C SA10 SA11 SA12 SA13 SA14 SA15

    AM29F017D-120

    Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
    Text: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation


    Original     		PDF Am29F017D Am29F016C Am29F017B AM29F017D-120 AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13

    AM29F016D-120

    Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
    Text: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any


    Original     		PDF Am29F016D 21444E5 AM29F016D-120 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15

    AM29F016D-120

    Abstract: No abstract text available
    Text: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement Am29F016D Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications


    Original     		PDF Am29F016D 26244A5 AM29F016D-120

    Untitled

    Abstract: No abstract text available
    Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device


    Original     		PDF Am29F016B Am29F016 20-year 48-pin 40-pin 44-pin

    AM29F016D-120

    Abstract: amd 2732 AMD 26244
    Text: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement (Retired Product) Am29F016D Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for


    Original     		PDF Am29F016D 26244A4 AM29F016D-120 amd 2732 AMD 26244

    am29f016d-90

    Abstract: No abstract text available
    Text: PRELIMINARY Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology


    Original     		PDF Am29F016D Am29F016 Am29F016B am29f016d-90

    AM29F016D-120

    Abstract: No abstract text available
    Text: Am29F016D Known Good Die Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29F016D AM29F016D-120

    SA10

    Abstract: SA11 AM29F016B-90
    Text: PRELIMINARY Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology


    Original     		PDF Am29F016B Am29F016 sector20 16-038-TSOP-1 TSR040--40-Pin TSR040 SA10 SA11 AM29F016B-90

    SA20-SA23

    Abstract: SA11 SA12 SA15 SA16 SA20 SA24 SA28 SA24-SA27 SA12-SA15
    Text: SUPPLEMENT Am29F016D Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29F016D data sheet, publication number 21444. This document describes the sector goup protection and sector group unprotection functions on the Am29F016D device.


    Original     		PDF Am29F016D Am29F016B SA20-SA23 SA11 SA12 SA15 SA16 SA20 SA24 SA28 SA24-SA27 SA12-SA15

    AM29F016

    Abstract: 80 pin simm flash EDI7F332MC
    Text: EDI7F332MC White Electronic Designs 2Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2Mx32 respectively. The modules are based on AMDs AM29F016 - 2Mx8 Flash device in TSOP packages which are mounted on a FR4 substrate.


    Original     		PDF EDI7F332MC 2Mx32 EDI7F332MC EDI7F2332MC AM29F016 EDI7F322MC-BNC: 150ns 80 pin simm flash

    SA10

    Abstract: SA11
    Text: PRELIMINARY Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original     		PDF Am29F016B Am29F016 SA10 SA11

    AM29F016

    Abstract: AM29F016-90 SA28 SA29 SA30 AM29F016 amd
    Text: FINAL Am29F016 Advanced Micro Devices 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program Algorithms — Minimizes system level power requirements


    Original     		PDF Am29F016 48-pin AM29F016-90 SA28 SA29 SA30 AM29F016 amd

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		PDF Am29F016B 20-year 29F016 44-pin

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation


    OCR Scan     		PDF Am29F017B Am29F016C 20-year 48-pin

    AM29F016B

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)


    OCR Scan     		PDF Am29F016B 48-pin 40-pin 29F016 44-pin 16-038-S044-2 AM29F016B 29F016B

    Untitled

    Abstract: No abstract text available
    Text: PRFI ¡YliNARV AMDB A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation


    OCR Scan     		PDF Am29F016C AM29F017B Am29F017B

    29f016b

    Abstract: amd 29f016b
    Text: AMDa Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ M anufactured on 0.32 \im process technology


    OCR Scan     		PDF Am29F016B 29F016B 29f016b amd 29f016b

    AM29F016B-S

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology


    OCR Scan     		PDF Am29F016B Am29F016 Icc41° AM29F016B-S

    Untitled

    Abstract: No abstract text available
    Text: moi EDI7F4334MC 4x4Megx32 ELECTRONIC DESIGNS. IN C 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4Meg x 32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.


    OCR Scan     		PDF EDI7F4334MC 4x4Megx32 4x4Megx32 EDI7F4334MC AM29F016 ED17F4334MC-BNC 80pin 150ns EQ8-15