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NIC Components Corp NATT220M50V6.3X8NSF Cap Aluminum 22uF 50V 20% Cylindrical T/R - Tape and Reel (Alt: NATT220M50V6.3X8NS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NATT220M50V6.3X8NSF	Reel		20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
NIC Components Corp NATT220M63V8X10.5KLBF Cap Aluminum 22uF 63V 20% Cylindrical T/R - Tape and Reel (Alt: NATT220M63V8X10.5K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NATT220M63V8X10.5KLBF	Reel		20 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $0.168	Buy Now
NIC Components Corp NATT220M35V6.3X6.3NLSF Cap Aluminum 22uF 35V 20% Cylindrical T/R - Tape and Reel (Alt: NATT220M35V6.3X6.3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NATT220M35V6.3X6.3NLSF	Reel		20 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
NIC Components Corp NATT220M50V6.3X8NLSF Cap Aluminum 22uF 50V 20% Cylindrical T/R - Tape and Reel (Alt: NATT220M50V6.3X8NL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NATT220M50V6.3X8NLSF	Reel		20 Weeks	4,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
NIC Components Corp NATT220M35V6.3X6.3NSF Cap Aluminum 22uF 35V 20% Cylindrical T/R - Tape and Reel (Alt: NATT220M35V6.3X6.3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NATT220M35V6.3X6.3NSF	Reel		20 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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ATT220 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ATT220 Abstract: VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ V c lamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I l im 10 10 10 10	Original	VNB10N07/K10N07FM VNP10N07FI/VNV10N07 VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 VNB10N07, VNK10N07FM, VNV10N07 ATT220 VNB10N07 VNK10N07FM VNP10N07FI	PDF
Rectifier t2d Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D" Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)	OCR Scan	BYW29 ISOWATT220AC) T0220AC ISOWATT220AC T0220AC BYW29-200 ISOWATT220AC BYW29F-200 7cJ2ci237 Rectifier t2d t2d diodes T2D 53 BYW29-200 BYW29F-200 "T2D"	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGYCAPABILITY INSULATED VERSION (ISO W ATT220AC ):	OCR Scan	BYW29 ATT220AC T0220A ISOWATT220AC BYW29-200 BYW29F-200	PDF
ATT220AC Abstract: BYW80 BYW80-200 BYW80F-200 ISOWATT220AC Text: SCS-THOMSON BYW80ÇF HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION ISOW ATT220A C ): Insulating voltage = 2000 V DC	OCR Scan	BYW80 ISOWATT220AC) T0220AC, ISOWATT220AC T0220AC BYW80-200 ATT220AC BYW80F-200 ATT220AC BYW80-200 BYW80F-200	PDF
transistor packages sot93 Abstract: No abstract text available Text: IS O W A T T P A C K A G E S IN F O R M A T IO N S ISO W A TT218 AND ISO W ATT220 EASY TO USE ISO LATED POWER PACKAGES General SGS-THOMSON has developed two isolated pack ages, the ISOW ATT218 and the ISOW ATT220 for use in place of the standard SOT-93/TO-218 and	OCR Scan	TT218 ATT220 ATT218 OT-93/TO-218 O-220 ISOWATT218 transistor packages sot93	PDF
IRF830 Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI Text: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2	OCR Scan	00HS7Db IRF830FI IRF831/FI IRF830 IRF830FI IRF831 IRF831FI Gl4S71S IRF830/FI-IRF831/FI GC237 IRF 830	PDF
HA 1137 Abstract: STP60N05 STP60N05FI Text: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON lÂ G Â L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2	OCR Scan	004b53cÃ STP60N05 STP60N05FI STP60N05 STP60N05FI 0G4b54S STP60N05/FI 5g05970 HA 1137	PDF
IR D4-D4 Abstract: STPS1535F ISOWATT220AC STPS1535D STPS1545D STPS1545F 1545F SEB1 Text: —# SGS-THOMSON k7 w* KfflD g @[iEUl(gTn^®[RiiD s STPS1535D/F STPS1545D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY	OCR Scan	STPS1535DF STPS1545D/F T0220AC ISOWATT220AC, ISOWATT220AC STPS1535D STPS1535F STPS1545D STPS1545F IR D4-D4 STPS1535F ISOWATT220AC STPS1545F 1545F SEB1	PDF
Untitled Abstract: No abstract text available Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STP5NA60 STP5NA60FI STP5NA60/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STP10NA40 0NA40FI TP10NA40 TP10N A40FI STP10NA40/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: 7^2^237 *rJ 004b3flS ITO • SGTH SGS-THOMSON i[iJOT «§ STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP21N 05L STP21NQ5LFI . • . . . . • . R D S o n Id < 0.085 n < 0.085 Q 21 A 14 A dss 50 V 50 V TYPICAL Ros(on) = 0.065 Q	OCR Scan	004b3flS STP21N05L STP21N05LFI STP21N STP21NQ5LFI 004b3Tl STP21N05L/FI	PDF
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP3N100/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED	OCR Scan	BUZ11 BUZ11FI BUZ11/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY	OCR Scan	Q045752 IRFZ40 IRFZ40FI O-220 ATT220 IRFZ40/FI	PDF

Untitled Abstract: No abstract text available Text: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STP2NA50 STP2NA50FI STP2NA50/FI ATT220	PDF
Untitled Abstract: No abstract text available Text: B Y W 2 9 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ATT220AC): Insulating voltage = 2000 V DC	OCR Scan	ISOWATT220AC) T0-220AC ISOWATT220AC ISOWATT220AC BYW29-200 BYW29F-200	PDF
Untitled Abstract: No abstract text available Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q	OCR Scan	0D4L50L4 STP50N06L STP50N06LFI STP50N 06LFI QCmb510 STP50N06L/FI	PDF
Untitled Abstract: No abstract text available Text: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q	OCR Scan	D0MbS32 STP55N06L STP55N06LFI STP55N 06LFI 7T2T537 D04b53fl STP55N06L/FI	PDF
Untitled Abstract: No abstract text available Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	MTP3N60 MTP3N60FI MTP3N60/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: rz T ^ 7# V B 921ZV V B 921ZVFI s g s -th o m s o n HIGH VOLTAGE IGNITION COIL DRIVER POWER IC ADVANCE DATA . NO EXTERNAL COMPONENT REQUIRED . INTEGRATED HIGH VOLTAGE CLAMP . COIL CURRENT LIMIT INTERNALLY SET . HIGH RUGGEDNESS DESCRIPTION The VB921ZV and VB921ZVFI are monolithic	OCR Scan	921ZV 921ZVFI VB921ZV VB921ZVFI	PDF
Untitled Abstract: No abstract text available Text: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY	OCR Scan	TP3055E MTP3055E TP3055EFI MTP3055E/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY	OCR Scan	STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220	PDF
Untitled Abstract: No abstract text available Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED	OCR Scan	STP36N TP36N05LFI STP36N06L STP36N06LFI STP36N06L/FI ISQWATT220	PDF
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan		PDF

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ATT220 Search Results

ATT220 Price and Stock

NIC Components Corp NATT220M50V6.3X8NSF

NIC Components Corp NATT220M63V8X10.5KLBF

NIC Components Corp NATT220M35V6.3X6.3NLSF

NIC Components Corp NATT220M50V6.3X8NLSF

NIC Components Corp NATT220M35V6.3X6.3NSF

ATT220 Datasheets Context Search

ATT220

Rectifier t2d

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ATT220AC

transistor packages sot93

IRF830

HA 1137

IR D4-D4

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TDA0161 equivalent