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    onsemi ATP218-TL-H

    MOSFET N-CH 30V 100A ATPAK
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    ATP218 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATP218-TL-H On Semiconductor ATP218 - Power MOSFET 30V 100A 3.8mOhm Single N-Channel ATPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8970A ATP218 N-Channel Power MOSFET http://onsemi.com 30V, 100A, 3.8mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.) Halogen free compliance •


    Original
    PDF EN8970A ATP218 6600pF PW10s) PW10s, L100Hwhere

    rl03

    Abstract: No abstract text available
    Text: ATP218 Ordering number : EN8970 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive • • Input Capacitance Ciss=6600pF(typ.) Halogen free compliance


    Original
    PDF EN8970 ATP218 6600pF PW10s) PW10s, rl03

    Untitled

    Abstract: No abstract text available
    Text: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.)


    Original
    PDF ATP218 EN8970A 6600pF

    Untitled

    Abstract: No abstract text available
    Text: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.)


    Original
    PDF ATP218 EN8970A 6600pF