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    APT84F50L Price and Stock

    Microchip Technology Inc APT84F50L

    MOSFET N-CH 500V 84A TO264
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    Onlinecomponents.com APT84F50L
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    APT84F50L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT84F50L Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 84; RDS(on) (Ohms): 0.065; BVDSS (V): 500; Original PDF

    APT84F50L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ultra fast recovery diode 500V

    Abstract: No abstract text available
    Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low


    Original
    PDF APT84F50B2 APT84F50L 320ns O-264 APT84F50B2 O-247 ultra fast recovery diode 500V

    APT84F50B2

    Abstract: APT84F50L MIC4452
    Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low


    Original
    PDF APT84F50B2 APT84F50L 320ns O-264 O-247 APT84F50B2 APT84F50L MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT84F50B2 APT84F50L 320ns O-264 O-247

    920-11

    Abstract: No abstract text available
    Text: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT84F50B2 APT84F50L 320ns O-264 APT84F50B2 O-247 920-11