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Catalog Datasheet	MFG & Type	PDF	Document Tags
APT5010 Abstract: No abstract text available Text: • R W 'æ APT501OJVR A dvanced pow er Te c h n o l o g y ' soov 44a o .i o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	APT501OJVR OT-227 APT5010JVR E145592 APT5010
Untitled Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y APT501OJVR 500V 44A 0.1000 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT501OJVR OT-227 APT5010JVR E145592
Untitled Abstract: No abstract text available Text: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®	OCR Scan	PDF	APT501OJ soov44a OT-227 APT5010JVR E145592
sm 126 ao 570 Abstract: No abstract text available Text: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	O-264 APT5010JVFR E145592 sm 126 ao 570