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Bourns Inc 6000-102K-RC RF Inductors - Leaded 1.0mH 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	6000-102K-RC	Bulk	18,000		10	1 - 10 $0.531 100 $0.413 1000 $0.379 10000 $0.371	Buy Now
Bourns Inc 6000-221K-RC RF Inductors - Leaded 220uH 1A 20Q
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	6000-221K-RC	Bulk	4,000		10	1 - 10 $0.511 100 $0.499 1000 $0.414 10000 $0.379	Buy Now
Bourns Inc 6000-3R3M-RC RF Inductors - Leaded 3.3uH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	6000-3R3M-RC	Bulk	1,620		10	1 - 10 $0.593 100 $0.495 1000 $0.433 10000 $0.424	Buy Now
Bourns Inc 6000-331K-RC RF Inductors - Leaded 330uH 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	6000-331K-RC	Bulk	990		10	1 - 10 $0.586 100 $0.489 1000 $0.374 10000 $0.357	Buy Now
Bourns Inc 6000-151K-RC RF Inductors - Leaded 150 UH 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	6000-151K-RC	Bulk	380		10	1 - 10 $0.604 100 $0.495 1000 $0.433 10000 $0.391	Buy Now

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9X12MM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
acp1 smd Abstract: MMM5047 Text: Product Preview Order this document from WBSG Marketing Rev. 2, 12/2002 MMM5047 π/4-DQPSK/GMSK 800/1900 MHz 3.5 V Power Amplifier Package Information Plastic Package Case 1440 Module, 9x12mm Ordering Information Device Device Marking Package MMM5047 Figure 42	Original	PDF	MMM5047 9x12mm) MMM5047 10-digit MMM5047) acp1 smd
S-AU85 Abstract: TORU133 TB6595FL TC51WHM716AXBN70 TC51WKM716AXBN75 Text: 東芝半導体情報誌アイ 2003年3月号 1 業界初の大容量低消費電力 TC51WHM716AXBN70、TC51WKM716AXBN75 128メガビット擬似SRAM モバイルメモリマーケティング部 045-890-2701 低消費電力タイプの擬似スタティックRAM（Pseudo	Original	PDF	TC51WHM716AXBN70 TC51WKM716AXBN75 175mCMOS 12mmFBGA 12mm69FBGA 03/2Q S-AU85 TORU133 TB6595FL TC51WHM716AXBN70 TC51WKM716AXBN75
100PF Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI Text: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 FEATURES DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current	Original	PDF	BS616UV1610 100ns x8/x16 BS616UV1610 R0201-BS616UV1610 100PF BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
circuit diagram of Zigbee Based Wireless Abstract: circuit diagram wireless camera transmitter gsm door lock circuit diagram circuit diagram of wireless door lock system GSM home automation block diagram GSM home automation circuit diagram voice usage to charge mobile phones block diagram schematic diagram of bluetooth headphone i-300 gsm modem datasheet dvr 16 channel dvs Text: WIRELESS & MOBILE PORTFOLIO Your Key to Next-Generation Communications Wireless & Mobile Portfolio Your Key to Next-Generation Communications Table of Contents Wireless & Mobile Portfolio Your Key to Next-Generation Communications Cellular Platforms Page 3	Original	PDF	BR1904/D circuit diagram of Zigbee Based Wireless circuit diagram wireless camera transmitter gsm door lock circuit diagram circuit diagram of wireless door lock system GSM home automation block diagram GSM home automation circuit diagram voice usage to charge mobile phones block diagram schematic diagram of bluetooth headphone i-300 gsm modem datasheet dvr 16 channel dvs
a10 bga-9 Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI Text: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current	Original	PDF	BS616UV1620 100ns x8/x16 BS616UV1620 R0201-BS616UV1620 a10 bga-9 transistors equivalent 0912 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
KSV884T4A0A-07 Abstract: KSVA44T4A0A-08 KSV884T4A0A-08 KSV884T4A0A-08A KSVA44T4A0A-07 PC133 registered reference design Text: 64Mb: x4, x8 Tiny-BGA SYNCHRONOUS DRAM FEATURES PIN ASSIGNMENT Top View ` PC66-, PC100- and PC133-compliant ` 143 MHz, graphical 4 Meg x 16 option ` Fully synchronous; all signals registered on positive edge of system clock ` Internal pipelined operation; column address can be	Original	PDF	PC66-, PC100- PC133-compliant 096-cycle 44-Pin PC133) PC100) KSV884T4A0A-07 KSVA44T4A0A-08 KSV884T4A0A-08 KSV884T4A0A-08A KSVA44T4A0A-07 PC133 registered reference design
TPD7203F Abstract: THPV357023BCBB AL50 GT5G131 THPV357022BCBB TPS850 TPS851 MCP NAND NOR 10mm4 Text: 東芝半導体情報誌アイ 2002年5月号  VOLUME 118 今月の新製品情報 •業界最小サイズのスタックドMCP .P2 ■W-CDMA用InGaP系 HBTパワーアンプモジュール .P2 ■3V駆動ストロボフラッシュ用IGBT .P3	Original	PDF	03-3457-3405FAX. THPV357022BCBB/THPV357023BCBB 10mm4 70mm2 LSI045-890-2524 TB6551F TPD7203F THPV357023BCBB AL50 GT5G131 THPV357022BCBB TPS850 TPS851 MCP NAND NOR 10mm4
F3F3 Abstract: WS256 bus1 Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product	Original	PDF
BS616UV8021 Abstract: BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC BS616UV8021FI Text: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8021 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current	Original	PDF	BS616UV8021 100ns x8/x16 BS616UV8021 R0201-BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC BS616UV8021FI
sandisk 32GB Nand flash Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC	Original	PDF	92-DS-1205-10 sandisk 32GB Nand flash SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
sandisk 32GB Nand flash Abstract: SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk‟s successful mDOC	Original	PDF	92-DS-1205-10 sandisk 32GB Nand flash SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G
sandisk 32GB Nand flash Abstract: sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, November 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC	Original	PDF	92-DS-1205-10 sandisk 32GB Nand flash sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
a10 bga-9 Abstract: BS616UV8011 BS616UV8011BC BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC BS616UV8011FI 100PF Text: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI BS616UV8011 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current	Original	PDF	BS616UV8011 100ns x8/x16 BS616UV8011 R0201-BS616UV8011 a10 bga-9 BS616UV8011BC BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC BS616UV8011FI 100PF