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IXYS Corporation IXBH9N160G IGBT 1600V 9A 100W TO247AD
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DigiKey	IXBH9N160G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXBH9N160G		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXBH9N160G	Tube			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXBF9N160G IGBT 1600V 7A 70W I4PAC
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DigiKey	IXBF9N160G	Tube			25	1 - 10 - 100 $4.0644 1000 $4.0644 10000 $4.0644	Buy Now
Littelfuse Inc IXBF9N160G Disc Igbt Bimosfet-High Volt I4-Pak Iso+/Tube \|Littelfuse IXBF9N160G
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Newark	IXBF9N160G	Bulk			25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others IXBH9N160G INSTOCK
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Chip 1 Exchange	IXBH9N160G		6,513			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division IXBH9N160G IGBT DIS.DIODE SINGLE 5A 1600V BIMOSFET TO247
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Ozdisan Elektronik	IXBH9N160G					1 $6.01227 10 $6.01227 100 $5.4657 1000 $5.4657 10000 $5.4657	Get Quote
Win Source Electronics	IXBH9N160G		931			1 - 10 $10.457 100 $6.971 1000 $6.971 10000 $6.971	Buy Now

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9N160G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES	Original	PDF	9N160G O-247 9-140/160G
9n160g Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data	Original	PDF	9N140G 9N160G O-247 9N140G 9-140/160G 9n160g IXBH 9N160G D-68623 ixbh9n160g
IXBH 9N160G Abstract: IXBH9N160G 9N160G Text: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES	Original	PDF	9N160G O-247 9N160G 9-140/160G IXBH 9N160G IXBH9N160G
Untitled Abstract: No abstract text available Text: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	9N160 9-140/160G
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Untitled Abstract: No abstract text available Text: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	9N160 9-140/160G
9n160 Abstract: 9N160G D-68623 Text: Advanced Technical Information IXBF 9N140 G IC25 IXBF 9N160 G VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM =7A = 1400/1600 V = 4.9V = 70 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C	Original	PDF	9N140 9N160 9N140 9N160 9-140/160G 9N160G D-68623
IXAN0014 Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements Text: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast	Original	PDF	IXAN0014 D-68623 IXAN0014 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6