transistor 9fb
Abstract: 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage
|
Original
|
PDF
|
BC807/BC808
BC817/BC818
OT-23
BC807
BC808
-100mA
-300mA
transistor 9fb
9FC SOT23
marking code 9FB
9fc marking code
marking 9fb
9fb transistor
bc807
BC808
bc807 marking code
transistor BC807
|
BC808
Abstract: 9fb transistor bc807 BC817 BC818 026 pnp
Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
|
Original
|
PDF
|
BC807/BC808
BC817
BC818
OT-23
BC807
BC808
-500mA,
-50mA
BC808
9fb transistor
bc807
BC818
026 pnp
|
UTC marking
Abstract: No abstract text available
Text: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
|
Original
|
PDF
|
BC807/BC808
BC817
BC818
OT-23
BC807
BC808
QW-R206-026
UTC marking
|
9FC SOT23
Abstract: No abstract text available
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage
|
Original
|
PDF
|
BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC808
9FC SOT23
|
HBC807
Abstract: marking 9fb 9FC SOT23
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
|
Original
|
PDF
|
HE6830
HBC807
HBC807
OT-23
marking 9fb
9FC SOT23
|
HBC807
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
|
Original
|
PDF
|
HE6830
HBC807
HBC807
OT-23
200oC
183oC
217oC
260oC
245oC
|
BC807
Abstract: marking code 9FB marking 9fb BC808 9FC SOT23
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC807
marking code 9FB
marking 9fb
BC808
9FC SOT23
|
9FC SOT23
Abstract: BC807 BC808
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
BC807/BC808
BC817/BC818
OT-23
BC807
BC808
9FC SOT23
BC807
BC808
|
marking CODE "25M" SOT23 -3
Abstract: BC80725MTF fairchild sot-23 Device Marking pc MARKING 25M SOT23 BC80840MTF
Text: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
PDF
|
BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC803
OT-23
marking CODE "25M" SOT23 -3
BC80725MTF
fairchild sot-23 Device Marking pc
MARKING 25M SOT23
BC80840MTF
|
Untitled
Abstract: No abstract text available
Text: NCV97310 Product Preview Automotive BatteryConnected Low-Iq MultiOutput Power Management Unit with 3 Buck Regulators http://onsemi.com Description The NCV97310 is a 3−output regulator consisting of a low−Iq battery−connected 3 A, 2 MHz non−synchronous switcher and two
|
Original
|
PDF
|
NCV97310
NCV97310
NCV97310/D
|
Untitled
Abstract: No abstract text available
Text: CUBIT-622 Device DATA SHEET PRODUCT PREVIEW DESCRIPTION FEATURES The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3,
|
Original
|
PDF
|
TXC-05805
8/16-bit)
TXC-05805-MB
|
CBD10
Abstract: intel 7882 MARKING 09F PHAST-12E TXC-05802B TXC-05810 TXC-06212 SA 6356
Text: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or
|
Original
|
PDF
|
CUBIT-622
TXC-05805
8/16-bit)
TXC-05805-MB
CBD10
intel 7882
MARKING 09F
PHAST-12E
TXC-05802B
TXC-05810
TXC-06212
SA 6356
|
Untitled
Abstract: No abstract text available
Text: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DATA SHEET DESCRIPTION The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3,
|
Original
|
PDF
|
TXC-05805
8/16-bit)
TXC-05805-MB
CUBIT-622
TXC-05805
|
A01H
Abstract: 9FF MARKING T-RA18 SA 6356
Text: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or
|
Original
|
PDF
|
TXC-05805
8/16-bit)
TXC-05805-MB
A01H
9FF MARKING
T-RA18
SA 6356
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CM22 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CM22
|
Original
|
PDF
|
32-Bit
TLCS-900/H1
TMP92CM22
TMP92CM22FG
TMP92CM22
900/H1
|
PDCR 900
Abstract: SMD Transistor p1f transistor SMD P1f smd marking code E1H marking code p52 SMD al p67 smd smd code marking 5h semiconductor SMD MARKING CODE ad 5.9 PDCR 900 series MV15
Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CM22 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CM22
|
Original
|
PDF
|
32-Bit
TLCS-900/H1
TMP92CM22
TMP92CM22FG
TMP92CM22
TMP92CM22FG
900/H1
PDCR 900
SMD Transistor p1f
transistor SMD P1f
smd marking code E1H
marking code p52 SMD
al p67 smd
smd code marking 5h
semiconductor SMD MARKING CODE ad 5.9
PDCR 900 series
MV15
|
9FC SOT23
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Collector Emitter Voltage
|
OCR Scan
|
PDF
|
BC807/BC808
OT-23
BC817/BC818
BC807
BC808
9FC SOT23
|
Untitled
Abstract: No abstract text available
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807
|
OCR Scan
|
PDF
|
BC807/BC808
BC817/BC818
BC807
BC808
7Tb414S
|
C5 MARKING TRANSISTOR
Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage
|
OCR Scan
|
PDF
|
BC807/BC808
BC817/BC818
BC807
BC808
OT-23
-10mA,
C5 MARKING TRANSISTOR
BC808
marking code 9FB
marking 9fb
9fb transistor
|
marking code va transistors
Abstract: BC807 BC808 sot-23 Marking sj
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic
|
OCR Scan
|
PDF
|
BC807/BC808
BC817/BC818
BC807
BC808
OT-23
BC807
002S0bli
marking code va transistors
BC808
sot-23 Marking sj
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage
|
OCR Scan
|
PDF
|
BC807/BC808
BC817/BC
BC807
BC808
BC808
BC807
|
Untitled
Abstract: No abstract text available
Text: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated
|
OCR Scan
|
PDF
|
1RF740LC
D-6380
Q021S61
|
smd code 9fc
Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Text: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti fier utilize advanced processing techniques to
|
OCR Scan
|
PDF
|
S6702
OT-23.
BA-481
EIA-541.
smd code 9fc
smd 2d 1002 -reel
smd diode 2d
mosfet ir 840
SOT-23 marking 2f p-Channel
sot-23 MARKING CODE nm
|
Untitled
Abstract: No abstract text available
Text: PD 9.1437 International lö R Rectifier IRF9540N PRELIMINARY H E X F E T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V DSS = - 1 0 0 V
|
OCR Scan
|
PDF
|
IRF9540N
O-220
|
