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Catalog Datasheet	MFG & Type	Document Tags	PDF
fet 600V 4a Abstract: No abstract text available Text: 2SK2628LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absoulute Maximum Ratings/Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current D.C.	Original	2SK2628LS O-220FI 991119TM2fXHD fet 600V 4a	PDF

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fet 600V 4a

Abstract: No abstract text available
Text: 2SK2628LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absoulute Maximum Ratings/Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current D.C.

Original

2SK2628LS O-220FI 991119TM2fXHD fet 600V 4a

PDF