Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar
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TC75W56FU
TC75W56FU
20//A
961001EBA1
100mV
100mV
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT/DC
64-MBIT
TC58V64FT/DC
016-bit)
528-byte
44/40-P-400-0
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TC5117445CSJ
Abstract: No abstract text available
Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The
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TC5117445CSJ-40
304-WORD
TC5117445CSJ
28-pin
17445CSJ-40
TC5117445CSJ
SOJ28
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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THMY644071EG-10
304-WORD
64-BIT
THMY644071EG
TC59S6416FT
THMY644071
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
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TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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Untitled
Abstract: No abstract text available
Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72-BIT
THM73V8015ATG-4
THM73V8015ATG
608-word
TC5165805AFT
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
C-22A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA75339AP TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75339AP QUAD COMPARATOR The TA75339AP consists of four independent voltage comparators with an output sink current specification as low as 60mA Min. for all four comparators.
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TA75339AP
TA75339AP
DIP14-P-300-2
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THL64V4075ATG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications
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THL64V4075ATG-4
THL64V4075ATG
304-word
64-bit
TC5165165AFT/AFTS
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bft10
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-10
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-400-1
44-P-400-0
bft10
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TC55257DPL
Abstract: No abstract text available
Text: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates
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TC55257DPL/DFL/DFTL/DTRL-55L
768-WORD
TC55257DPL/DFL/DFTL/DTRL
144-bit
Ta250a
28-P-0
3E3-30-
TC55257DPL
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Intel 1103 DRAM
Abstract: D03B intel 1103 ram D018 D019 D032
Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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Y6432G1EG-80
432-WORD
64-BIT
THMY6416E1BEG
TC59SM708FT
64-bit
Intel 1103 DRAM
D03B
intel 1103 ram
D018
D019
D032
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MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.
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THMR1E16-6/-7/-8
128M-word
600MHz
711MHz
800MHz
16cydes)
-16CSP
MIG toshiba
ABB B45
THMR1E16-6
THMR1E16-7
B75 ABB
hiab
837 B34
toshiba mig
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a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC75W57FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W57FU DUAL COMPARATOR TC75W57FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar
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TC75W57FU
TC75W57FU
172M7
0Q2153G
Q021S31
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.
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THMY721661
BEG-80
216-WORD
72-BIT
THMY721661BEG
TC59S6408BFT/BFTL
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 7 2 8 0 F 1 B E G is a 8,3 8 8 ,6 0 8 -w o rd by 7 2 -b it synchronous dynam ic RAM module consisting of
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THMY7280F1
BEG-80
608-WORD
72-BIT
ililo11
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TB62710P/F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT T R f i 7 m7 i n P • fe# ■ ^mf ■ g SILICON MONOLITHIC T R f i 7 7m1 f 1 F ■ > # ■ ^mf ■ 8BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS The TB62710P, TB62710F is specifically designed for LED
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TB62710P/F
TB62710P,
TB62710F
DIP20-P-300-2
SSOP24-P-300-1
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Untitled
Abstract: No abstract text available
Text: TA78DM05,08,09,12S T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78DM05S, TA78DM08S, TA78DM09S, TA78DM12S 5V, 8Vf 9V, 12V LOW DROPOUT VOLTAGE REGULATOR The TA78DMxxS series consists of positive fixed output voltage regulator IC capable of sourcing current up to
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TA78DM05
TA78DM05S,
TA78DM08S,
TA78DM09S,
TA78DM12S
TA78DMxxS
500mA.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TA7252AP TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7252AP 5.9W AUDIO POWER AMPLIFIER The TA7252AP is audio power amplifier for consumer applications. It is designed for high power, low distortion and low noise. Since the package is a 7pin SIP Single
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TA7252AP
TA7252AP
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