diode E155
Abstract: mig20j
Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.
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MIG20J906E/EA
MIG20J906E,
MIG20J906EA
MIG20J906E
2-108E5A
2-108E6A
o--------Bo40-
80Ilo
961001EAA1
diode E155
mig20j
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2917
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2sk2749
Abstract: No abstract text available
Text: TO SHIBA 2SK2749 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M OSIII 2SK2749 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 15.9MAX.
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2SK2749
2sk2749
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive
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2SK2744
24mil
20kfl)
10/iS
VDD-40V,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.
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GT30J301
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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Untitled
Abstract: No abstract text available
Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)
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GT30J311
30/iS
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2sc5464
Abstract: No abstract text available
Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5464
2sc5464
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P channel 50A IGBT
Abstract: No abstract text available
Text: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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MIG50J101
2-110A1A
MIG50J101H
P channel 50A IGBT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.
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TLP3540
TLP3540
5X1010
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3111 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T• I Pm v? 1■ 1■ 1■ MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS The TOSHIBA MINI FLAT PHOTO RELAY TLP3111 is a small outline photo relay, suitable for surface m ount assembly.
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TLP3111
TLP3111
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2953
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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Untitled
Abstract: No abstract text available
Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)
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TPC8001
g--10
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance
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2SK2995
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS
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TPC8007-H
10//A
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GT60M303
Abstract: No abstract text available
Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.
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GT60M303
25//s
GT60M303
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SF500EX28
Abstract: sf500fx SF500FX28
Text: TO SHIBA SF500EX28,SF500FX28 TOSHIBA ALLOY-FREE THYRISTOR SF500EX28, SF500FX28 HIGH POWER CONTROL APPLICATIONS • • • • • • • • Repetitive Peak Off-State Voltage V d r m ì = 2500~3000V Repetitive Peak Reverse Voltage VRRMJ Average On-State Current
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SF500EX28
SF500FX28
SF500EX28,
400//s
961001EAA1
sf500fx
SF500FX28
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)
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TPC8001
15mfi
10//A
20kfl)
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Toshiba transistor Ic 100A
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e
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GT25Q301
120IG
Toshiba transistor Ic 100A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN9C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQfUFT • ■ u m ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6
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HN9C16FT
2SC5091
2SC5261
1000MHz
2000MHz
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.
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MG150J7KS50
150J7KS50
6o----12
16o----
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG25Q6ES50A
MG25Q
ES50A
961001EAA1
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