200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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IXGH32N60B
Abstract: No abstract text available
Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM
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IXGH32N60B
O-247
32N60B
32N60BU1
IXGH32N60B
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IXGH32N60B
Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD
Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM
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IXGH32N60B
O-247
32N60B
32N60BU1
IXGH32N60B
95566B
IXGH32N60
TO-247 AD
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IXGH32N60B
Abstract: No abstract text available
Text: nixYS IXGH 32N60B HiPerFAST IGBT CES C25 VCE sat Symbol Test C onditions v CES T j = 25° C to 150c C 600 V V CGR T j = 25° C to 150° C; RGE = 1 M n 600 V v GES Continuous +20 V VGEM Transient ±30 V ^C25 T c = 25° C 60 A ^C9G T c = 9 0 °C Maximum Ratings
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32N60B
O-247AD
O-247
32N60B
32N60BU1
IXGH32N60B
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