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    947 TRANSISTOR Search Results

    947 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    947 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m8730

    Abstract: DOLD BF9250.91 M7144 M7145 recticur M7907 9250BF M7696 m7850 BF9250
    Text: Leistungselektronik Halbleiterschütz BF 9250, BH 9250 powerswitch 0217109 • • • • • • • • • • • BF 9250 bis 10 A BF 9250 bis 50 A • • • nach IEC/EN 60 947-4-2, IEC/EN 60 947-4-3 1-, 2- und 3-polige Ausführungen Steuerspannung AC 230 V an A1/A2


    Original     		PDF DC24V BF9250 M7153 D-78114 m8730 DOLD BF9250.91 M7144 M7145 recticur M7907 9250BF M7696 m7850 BF9250

    Q62702-D1337

    Abstract: BDP948 BDP950 Q62702-D1335 947 SOT-223
    Text: BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Type Marking Ordering Code Pin Configuration


    Original     		PDF BDP948, BDP950 Q62702-D1335 OT-223 Q62702-D1337 Nov-28-1996 Q62702-D1337 BDP948 BDP950 Q62702-D1335 947 SOT-223

    bdp 11

    Abstract: marking bdp
    Text: BDP947, BDP949 Silicon NPN Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947


    Original     		PDF BDP947, BDP949 BDP948, BDP950 VPS05163 BDP947 OT223 OT223 bdp 11 marking bdp

    Untitled

    Abstract: No abstract text available
    Text: BDP947, BDP949 Silicon NPN Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947


    Original     		PDF BDP947, BDP949 BDP948, BDP950 VPS05163 BDP947 OT223 OT223

    947 transistor

    Abstract: transistor a 949 VPS05163 TRANSISTOR bdp 948
    Text: BDP 947, BDP 949 Silicon NPN Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type Marking


    Original     		PDF VPS05163 OT-223 Oct-22-1999 947 transistor transistor a 949 VPS05163 TRANSISTOR bdp 948

    BDP947

    Abstract: BDP948 BDP949 BDP950 VPS05163 947 transistor
    Text: BDP947, BDP949 Silicon NPN Transistor  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP948, BDP950 PNP 2 1 Type Marking Pin Configuration BDP947 BDP 947


    Original     		PDF BDP947, BDP949 BDP948, BDP950 BDP947 OT223 VPS05163 Aug-06-2001 BDP947 BDP948 BDP949 BDP950 VPS05163 947 transistor

    947 transistor

    Abstract: No abstract text available
    Text: BDP 947, BDP 949 Silicon NPN Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 948, BDP 950 PNP 2 1 Pin Configuration VPS05163 Type


    Original     		PDF VPS05163 OT-223 Oct-22-1999 947 transistor

    VPS05163

    Abstract: No abstract text available
    Text: BDP 948, BDP 950 PNP Silicon AF Power Transistors  For AF driver and output stages 4  High collector current  High current gain  Low collector-emitter saturation voltage 3  Complementary types: BDP 947, BDP 949 NPN 2 1 Pin Configuration VPS05163 Type


    Original     		PDF VPS05163 OT-223 Oct-22-1999 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: BDP 948, BDP 950 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 947, BDP 949 NPN 2 1 Pin Configuration VPS05163


    Original     		PDF VPS05163 OT-223 Oct-22-1999

    300 watts amplifier s-band

    Abstract: "Power over Ethernet"
    Text: SMBJSAC5.0 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR Description SMBJ surface mount package is utilized where power and space is a requirement. Designed for effective


    Original     		PDF 0e3/TR13 MSC0906 IEEE802 300 watts amplifier s-band "Power over Ethernet"

    Untitled

    Abstract: No abstract text available
    Text: SMAJ4728A THRU SMAJ4764A 8700 E. Thomas Road Scottsdale, AZ 85252 Phone: 480 941-6300 Fax: (480) 947-1503 Features • • • • • • SILICON 2 WATT ZENER DIODES For surface mount applications (flat handling surface for accurate placement) 3.3 thru 100 Volt Voltage Range


    Original     		PDF SMAJ4728A SMAJ4764A 1N4728A 1N4764A DO-214AC MIL-STD-750, IEEE802 \CPR\11302010 30-Nov-2010

    1.8 degree unipolar stepper motor 332-082

    Abstract: stepper motor driver board 332-098 RS 344-631 12v stepper motor 344631 12V unipolar STEPPER MOTOR 7.5 7.5 stepper motor STEPPER MOTOR 344-631 1.8 degree BIPOLAR 4 PIN stepper motor 12v 7.5 stepper motor 332-947 saa1027 application note
    Text: Issued November 1987 B8199 Stepper motors 7.5¡ stepper motors size 1 332-947 and size 2 (332-953) Two 7.5¡ stepper motors each with four 12V dc windings (coils) and permanent magnet rotor construction. Designed for unipolar drive, these motors are easily interfaced to simple and relatively low power


    Original     		PDF B8199 60mn/m RS336-444) 1.8 degree unipolar stepper motor 332-082 stepper motor driver board 332-098 RS 344-631 12v stepper motor 344631 12V unipolar STEPPER MOTOR 7.5 7.5 stepper motor STEPPER MOTOR 344-631 1.8 degree BIPOLAR 4 PIN stepper motor 12v 7.5 stepper motor 332-947 saa1027 application note

    teltone m-947

    Abstract: 8048 printer
    Text: INNOVATING SOLUTIONS M-947 DTMF Receiver The T eltone M -947 com bines switched-capacitor and dig­ ital techniques to decode Dual-Tone M ultifrequency DTM F signals to four-bit binary data. N o prefiltering o f the DTM F signal is required. The M -947 is contained in a 22-pin DIP,


    OCR Scan     		PDF M-947 22-pin 12-volt 579-M -20th teltone m-947 8048 printer

    bo 947

    Abstract: BDP947C dp947
    Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B


    OCR Scan     		PDF BDP948, BDP950 BDP947 Q62702-D1335 Q62702-D1337 OT-223 OT-223 300ns; bo 947 BDP947C dp947

    teltone m-947

    Abstract: M947 bo 947 M-947 947 transistor TELTONE bd 743 transistor 947s dial tone crystal oscillator 4049
    Text: SUSTAINED PRODUCTS ïE e lx d n e 1 JfflMHB M -947 DTMF Receiver • • • • • The Teltone M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF


    OCR Scan     		PDF M-947 22-pin 12-volt 579-MHz 22121-20H, teltone m-947 M947 bo 947 947 transistor TELTONE bd 743 transistor 947s dial tone crystal oscillator 4049

    Untitled

    Abstract: No abstract text available
    Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF BD944 BD946 BD948 BD943; CBD944 0Q34552

    m lc 945

    Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd

    BD946

    Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
    Text: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948


    OCR Scan     		PDF BD944 BD946 BD948 BD943; BD944 500mA -lc-250mA BD946 BD948 lc 945 p transistor BD943 IEC134

    BDS945

    Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
    Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors


    OCR Scan     		PDF 711002b BDS943/945/947 T-33-0? OT223) BDS944/946/948. BDS943 BDS945 BDS947 m lc 945 J 3305 DDM317S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP 2=C II 1 =B LU II CO O BDP 949 Q62702-D1337


    OCR Scan     		PDF BDP948, BDP950 Q62702-D1337 OT-223 Q62702-D1335 0235b05 fl23Sb05

    b0948

    Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
    Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A


    OCR Scan     		PDF BD944 BD946 BD948 BD943; BD944 BD948. 7Z82139 b0948 B0943 BD943 b0944 b0946 BD946 BD948

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS943/945/947 OT223 OT223) BDS944/946/948. BDS943 BDS945 BDS947cation D034b3b btS3T31

    BD946

    Abstract: BD948 IN 3319 B
    Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.


    OCR Scan     		PDF BD944 BD946 BD948 BD944 T-33-19 BD946 G0M30Ô IN 3319 B

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948