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    945 MOSFET N Search Results

    945 MOSFET N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    945 MOSFET N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		PDF MRF9030N MRF9030NBR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB


    Original     		PDF MRF9045N MRF9045NBR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045M/D MRF9045M MRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045MR1/D MRF9045MR1

    us 945 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9030M/D MRF9030MR1 us 945 mosfet

    93F2975

    Abstract: transistor WB1
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    XRF184

    Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
    Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF184/D MRF184 MRF184/D* XRF184 MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030 MRF9030LR1

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030N MRF9030NR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060N MRF9060NR1 MRF9060N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    IGBT ac switch circuit

    Abstract: mosfet ac switch GBAN-PVI-1 MPIC-5 parallel mosfet ultrafast igbt MOSFET designer manual AC SWITCH gban IGBT parallel power cycling
    Text: Technical Papers DT 94-5 USING MOS-GATED POWER TRANSISTOR IN AC SWITCH APPLICATIONS by Donald A. Dapkus II Problem: The IGBT and the power MOSFET are not suited to switching AC waveforms directly. The IGBT can only conduct current in one direction due to its use of


    Original     		PDF PVI1050. IGBT ac switch circuit mosfet ac switch GBAN-PVI-1 MPIC-5 parallel mosfet ultrafast igbt MOSFET designer manual AC SWITCH gban IGBT parallel power cycling

    MRF9030

    Abstract: MRF9030LSR1 MRF9030R1
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030R1 MRF9030LSR1 MRF9030R1 MRF9030 MRF9030LSR1

    mrf9030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030/D MRF9030 MRF9030S MRF9030SR1

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series

    MRF181

    Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
    Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF181/D MRF181SR1 MRF181ZR1 MRF181/D MRF181 300 uF 450 VDC Mallory Capacitor

    100B100JW500X

    Abstract: AGR09070EF JESD22-C101A 100B100JW500
    Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500

    Z921

    Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng

    RF-35-0300

    Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L

    Motorola 0936

    Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
    Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device


    OCR Scan     		PDF 945rola, X34873Q-2 MRF184/D Motorola 0936 305 Power Mosfet MOTOROLA 173 MHz RF CHIP

    SSD2003

    Abstract: 945 mosfet n mosfet n channel k 946 250M
    Text: DUAL N-CHANNEL POWER MOSFET SSD2003 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching tim es > Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF SSD2003 SSD2003 widths300ms, 945 mosfet n mosfet n channel k 946 250M