Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    945 MOSFET Search Results

    945 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    945 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		PDF MRF9030N MRF9030NBR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


    Original     		PDF LET9060C 2002/95/EC LET9060C

    Untitled

    Abstract: No abstract text available
    Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


    Original     		PDF LET9060F 2002/95/EC LET9060F

    945 TRANSISTOR

    Abstract: PD57045S
    Text: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57045 PD57045S PowerSO-10RF. 945 TRANSISTOR PD57045S

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B M243 SD57030 TSD57030 issi 546
    Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION


    Original     		PDF SD57030 SD57030 TSD57030 945 TRANSISTOR 700B M243 TSD57030 issi 546

    PD57060s

    Abstract: 945 TRANSISTOR PD57060
    Text: PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD57060S PD57060S PowerSO-10RF. 945 TRANSISTOR PD57060

    d5703

    Abstract: SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 PD57030 transistor C 945 capacitor 0.1uf 500v
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57030 PD57030S PD57030 PowerSO-10RF. d5703 SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 transistor C 945 capacitor 0.1uf 500v

    945 TRANSISTOR

    Abstract: PD57030S AN1294 PD57030 le5012
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD57030 PD57030S PD57030 PowerSO-10RF. 945 TRANSISTOR PD57030S AN1294 le5012

    945 TRANSISTOR

    Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
    Text: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD57006 PD57006S PD57006 PowerSO-10RF. 945 TRANSISTOR AN1294 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor

    945 TRANSISTOR

    Abstract: 700B PD57018 PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650

    capacitor 0.1uf 500v

    Abstract: 945 TRANSISTOR PD57030S LDMOS 1W AN1294 PD57030 transistor 945 transistor C 945 transistor d 945
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD57030 PD57030S PD57030 PowerSO-10RF. capacitor 0.1uf 500v 945 TRANSISTOR PD57030S LDMOS 1W AN1294 transistor 945 transistor C 945 transistor d 945

    4863-2

    Abstract: No abstract text available
    Text: SD57060 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION


    Original     		PDF SD57060 SD57060 TSD57060 4863-2

    PD57060s

    Abstract: 700B AN1294 PD57060 925MHz
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PowerSO-10RF PD57060S PowerSO-10RF. PD57060 700B AN1294 925MHz

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57070 PD57070S PowerSO-10RF PowerSO-10RF.

    capacitor 220 uf

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


    Original     		PDF PD57060 PD57060S PD57060S PowerSO-10RF. capacitor 220 uf

    PD57045S-E

    Abstract: PD57045S 700B AN1294 J-STD-020B PD57045-E PD57045TR-E L1620
    Text: PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13dB gain @ 945 MHz / 28 V ■ New RF plastic package


    Original     		PDF PD57045-E PD57045S-E PowerSO-10RF PowerSO-10RF. PD57045S-E PD57045S 700B AN1294 J-STD-020B PD57045-E PD57045TR-E L1620

    c18st

    Abstract: 700B AN1294 PD57070 PD57070S
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


    Original     		PDF PD57070 PD57070S PowerSO-10RF PD57070 PowerSO-10RF. c18st 700B AN1294 PD57070S

    Untitled

    Abstract: No abstract text available
    Text: LET9070FB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■


    Original     		PDF LET9070FB 2002/95/EC LET9070FB

    GP413

    Abstract: 945 TRANSISTOR 700B AN1294
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original     		PDF STAP57030 PowerSO-10RF STAP57030 AM02217 GP413 945 TRANSISTOR 700B AN1294

    Untitled

    Abstract: No abstract text available
    Text: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD57006-E PowerSO-10RF PowerSO-10RF.

    SMD Transistor 30w

    Abstract: 945 TRANSISTOR PD57030S PD57030 XPD57030 XPD57030S
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57030 PD57030S PD57030 PowerSO-10RF. SMD Transistor 30w 945 TRANSISTOR PD57030S XPD57030 XPD57030S