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    Untitled

    Abstract: No abstract text available
    Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		94385F IRGB5B120KD O-220 O-220AB O-220AB PDF

    IRGB5B120KD

    Abstract: TF010
    Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		94385F IRGB5B120KD O-220 O-220AB O-220AB IRGB5B120KD TF010 PDF