Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    91701B Search Results

    91701B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRHM3Z60

    Abstract: IRHM4Z60 IRHM7Z60 IRHM8Z60
    Text: PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si)


    Original     		91701B O-254AA) IRHM7Z60 IRHM3Z60 IRHM4Z60 IRHM8Z60 1000K O-254AA O-254AA. IRHM3Z60 IRHM4Z60 IRHM7Z60 IRHM8Z60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si)


    Original     		91701B O-254AA) IRHM7Z60 IRHM3Z60 IRHM4Z60 IRHM8Z60 1000K O-254AA O-254AA. PDF

    IRHNA7Z60

    Abstract: IRHNA8Z60
    Text: PD - 91701B IRHNA7Z60 IRHNA8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD W , RAD HARD HEXFET 30 Volt, 0.009W International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test


    Original     		91701B IRHNA7Z60 IRHNA8Z60 patente10) IRHNA7Z60 IRHNA8Z60 PDF