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    AN-994

    Abstract: IRF3415 IRF3415L IRF3415S
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


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    PDF 91509C IRF3415S/L IRF3415S) IRF3415L) AN-994 IRF3415 IRF3415L IRF3415S

    IRF3415S

    Abstract: AN-994 IRF3415 IRF3415L
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


    Original
    PDF 91509C IRF3415S/L IRF3415S) IRF3415L) IRF3415S AN-994 IRF3415 IRF3415L

    Untitled

    Abstract: No abstract text available
    Text: PD-91509C International IGR Rectifier IRF3415S/L HEXFET Power MOSFET • • • • • • A dvanced Process Technology Surface M ount IRF3415S Low-profile through-hole (IRF3415L) 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated


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    PDF PD-91509C IRF3415S/L IRF3415S) IRF3415L)