Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    915 TRANSISTOR Search Results

    915 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    915 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD 12W

    Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W transistor SMD 12W smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74

    VJ1206Y104KXAT

    Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER


    Original     		PDF DB-915-12W PD55015S DB-915-12W VJ1206Y104KXAT 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273

    AT27273

    Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
    Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY


    Original     		PDF DB-915-12W PD55015S DB-915-12W AT27273 DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20220 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,


    Original     		PDF 1-877-GOLDMOS 1301-PTB

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20003 4 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for


    Original     		PDF 1-877-GOLDMOS 1301-PTB

    20097

    Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for


    Original     		PDF 1-877-GOLDMOS 1301-PTB 20097 35 W 960 MHz RF POWER TRANSISTOR NPN

    PTB20145

    Abstract: No abstract text available
    Text: e PTB 20145 9 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB PTB20145

    z-Source

    Abstract: No abstract text available
    Text: e PTB 20095 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    Original     		PDF 1-877-GOLDMOS 1301-PTB z-Source

    20258

    Abstract: IEC-68-2-54 1301P
    Text: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB 20258 IEC-68-2-54 1301P

    20144

    Abstract: IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB 20144 IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN

    PTB 20097

    Abstract: No abstract text available
    Text: ERICSSON $ PTB 20097 40 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • Specified 40 Watts , 915 - 960 MHz • Class AB Characteristics • Collector Efficiency, 50% @ 40 W • Gold Metallization • Silicon Nitride Passivated


    OCR Scan     		PDF 200mA PTB 20097

    transistor tic 226

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,


    OCR Scan     		PDF

    PTB20145

    Abstract: transistor c-133
    Text: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20145 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 9 Watts minimum output


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,


    OCR Scan     		PDF

    25VDC

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features * * * * * The 20095 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 15 Watts minimum output


    OCR Scan     		PDF 100mA 25VDC

    lc 945 transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20097 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20003 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 4 Watts minimum output power


    OCR Scan     		PDF 915-960MHz)

    transistor R1d

    Abstract: ericsson 20144
    Text: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF IEC-68-2-54 Std-002-A transistor R1d ericsson 20144

    PTB 20181

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power


    OCR Scan     		PDF 915-960MHz) PTB 20181

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF IEC-68-2-54 Std-002-A

    lc 945 p transistor NPN

    Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor
    Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for


    OCR Scan     		PDF T-------------14 lc 945 p transistor NPN lc 945 p transistor transistor LC 945 lc 945 transistor

    PTB20144

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20144 6 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • The 20144 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    OCR Scan     		PDF

    ericsson 20144

    Abstract: lc 945 p transistor
    Text: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications.


    OCR Scan     		PDF