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    AN-994

    Abstract: IRL2910 IRL2910L SS2000
    Text: PD - 91376B IRL2910S/L HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS on = 0.026Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		91376B IRL2910S/L AN-994 IRL2910 IRL2910L SS2000 PDF

    MOSFET IRF 630

    Abstract: oa91
    Text: PD-91376B In terna tional IÖR Rectifier IRL2910S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Fast Switching • Fully Avalanche Rated V dss = 100 V


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